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  • 1
    Digitale Medien
    Digitale Medien
    Nonlinear optical properties of metal-quantum-dot composites synthesized by ion implantation
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 91 (1994), S. 493-504 
    Details
    ISSN: 0168-583X
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1016/0168-583X(94)96274-X
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  • 2
    Digitale Medien
    Digitale Medien
    Quantization effect on capacitance-voltage and current-voltage characteristics of an InAs/AlSb/GaSb interband tunneling diode (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4286-4289 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Capacitance-voltage measurements were performed on the InAs/AlSb/GaSb interband tunneling diode at various frequencies. Theoretical analyses using a self-consistent Schrödinger–Poisson solver were found in agreement with the experimental results under the forward-bias condition. The quantization energy of each subband of the electron in the InAs accumulation region is used to predict the tunneling current cutoff voltage in agreement with that of the current-voltage measurements. Therefore, the cutoff of the interband tunneling process is mainly caused by the crossover of the electron subband energy in the InAs conduction band with respect to the valence band of the GaSb electrode due to the increased external bias voltage.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346222
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  • 3
    Digitale Medien
    Digitale Medien
    On the effect of the barrier widths in the InAs/AlSb/GaSb single-barrier interband tunneling structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3451-3455 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The dependence of the interband tunneling current on AlSb barrier widths is studied in the InAs/AlSb/GaSb single-barrier diode structures. The experimental results show that the peak current density displays an exponential dependence on the barrier width. The Wentzel-Kramers-Brillouin approximation combined with the k⋅p two-band model were used in analyzing the energy level in the AlSb barrier through which the peak tunneling currents occur. The energy level thus obtained (0.48±0.10 eV above the valence band edge of the AlSb) agrees with the valence-band offset (0.40±0.15 eV) between the AlSb and the GaSb obtained by x-ray photoemission measurement reported by Gualtieri et al. [Appl. Phys. Lett. 49, 1037 (1986)]. By adjusting the barrier width properly, we obtained a high peak current density of 24 kA/cm2 (with a peak-to-valley ratio of 1.4) and a high peak-to-valley ratio of 4.5 (with a peak current density of 3.5 kA/cm2) at room temperature. In addition, the peak-current voltages for different AlSb barrier widths were calculated and compared with the measured results.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346355
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  • 4
    Digitale Medien
    Digitale Medien
    A new GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling diode and its tunneling mechanism (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2997-3000 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We propose and demonstrate a new GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling diode with a peak-current density as high as 7.6 kA/cm2 and a peak-to-valley current ratio of 5. In this device, the electrons in the InAs conduction band can resonantly tunnel through the AlSb/GaSb/AlSb double barrier into the GaSb valence band. By narrowing the GaSb well width from 65 to 30 A(ring), a drastic reduction of the tunneling current was found experimentally. This reduction is interpreted as evidences of the effect of the interband resonant tunneling process and the role of the light hole in the GaSb valence band. In addition, compared with the InAs/AlSb/GaSb/AlSb/InAs tunneling structure, a twice larger peak current density was obtained in the proposed structure which is attributed to a larger density of states of the GaSb light hole valence band compared with that of the InAs conduction band.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346437
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  • 5
    Digitale Medien
    Digitale Medien
    Effect of electron launcher structures on AlAs/GaAs double barrier resonant tunneling diodes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2540-2542 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied experimentally the effect of several electron launcher structures on AlAs/GaAs double barrier resonant diodes (RTDs). The experimental results show that a linearly graded AlGaAs launcher structure improves the tunneling current by presumably removing the hump in the conduction band caused by the space charges near the n-i junction in the spacer layer. Peak current densities as high as 170 kA/cm2 with a peak-to-valley current ratio of 3.2 were obtained from these graded launcher RTDs. Compared with the conventional RTD, the graded launcher gives a 50% improvement in the peak current density while reducing the peak-current voltage by 40% and maintaining a similar peak-to-valley current ratio.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353087
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  • 6
    Digitale Medien
    Digitale Medien
    The origin of hard magnetic properties in rapidly quenched Nd4Fe77.5B18.5 alloy : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6980-6982 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Until now, the origin of hard magnetic properties of rapidly quenched Nd-Fe-B alloys with lower Nd concentration is not clear. In this paper, the phase compositions of rapidly quenched Nd4Fe77.5B18.5 alloys annealed under different conditions have been studied by using zero-field spin-echo nuclear magnetic resonance (NMR) and Mössbauer effect (ME) techniques. It is found that there exists a certain amount of Nd2Fe14B phase in the samples annealed at 960 °C and ingot alloy, which have poor hard magnetic properties; while, the sample annealed under optimal condition consists only of bct-Fe3B as the main phase and a small amount of a-Fe. However, the ME result indicates that about 5 at. % Fe atoms in FeIII (8 g) site of bct-Fe3B have been replaced by Nd atoms; the NMR result demonstrates that 11B NMR spectrum is the characteristic peak of bct-Fe3B, but it broadens asymmetrically to the high frequency side, which is due to the bct-Fe3B influenced by Nd atoms. The amplitude of radio frequency (rf) excitation field required to get the maximum 11B spin-echo signal from bct-Fe3B in the sample annealed at 839 °C is only about one third as much as that required to excite the 11B in the bct-Fe3B influenced by Nd atoms in the sample annealed at 670 °C for a short time, which implies the latter has a larger coercivity field than the former. It is concluded that the origin of hard magnetic properties of Nd4Fe77.5B18.5 alloy is not related to the 2:14:1 phase, but to the change of bct-Fe3B itself.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352404
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  • 7
    Digitale Medien
    Digitale Medien
    Shallow ohmic contact to both n- and p-GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 754-756 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A shallow Pd/Ge/Ti/Pt/ohmic contact for both n- and p-GaAs has been investigated. The contacts were rapid thermally annealed in N2 for 15 s at temperatures from 350 to 550 °C. The lowest average specific contact resistances were 4.7×10−7 and 6.4×10−7 Ω cm2 for the n- and p-GaAs, respectively, when the n-GaAs was doped with Si to 2×1018 cm−3 and the p-GaAs was doped with carbon to 5×1019 cm−3. Electrical measurements and Auger depth profiles showed that the contacts were stable as they remained ohmic after an anneal at 300 °C for 20 h for both n- and p-GaAs. The p contact is more stable than the n contact at the higher temperatures where there is more As outdiffusion as determined by Auger depth profiles. Transmission electron microscopy showed that the interfaces between the p-GaAs and the contacts were smooth for both as-grown and annealed samples, and no oxides were detected.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.355248
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  • 8
    Digitale Medien
    Digitale Medien
    Heavily doped p-GaAs grown by low-pressure organometallic vapor phase epitaxy using liquid CCl4 (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2063-2065 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A hole concentration greater than 1020 cm−3 in GaAs has been achieved using a liquid CCl4 source for carbon in a low-pressure organometallic vapor phase epitaxy system. The resistivity and hole mobility measured at 300 K for a heavily carbon-doped (1.2×1020 cm−3) Hall sample made from a thin (180 nm) epitaxial layer were 8.0×10−4 Ω cm and 65 cm2/V s, respectively. Carbon-doped samples with excellent surface morphology were achieved using a V/III ratio of 22, and growth pressure and temperature of 80 Torr and 600 °C, respectively. A novel photoluminescence technique, based on band-gap shrinkage of heavily doped p+-GaAs, has been shown to be useful for nondestructive measurement of the hole concentration in submicrometer layers.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351637
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  • 9
    Digitale Medien
    Digitale Medien
    InAs/AlSb/GaSb single-barrier interband tunneling diodes with high peak-to-valley ratios at room temperature (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3040-3043 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have fabricated an InAs/AlSb/GaSb single-barrier interband tunneling diode by molecular beam epitaxy. In this structure, a large tunneling current can be obtained by taking the advantage of the large heterojunction-conduction band to valence band overlap (0.15 eV) between InAs and GaSb which offers flexible designs of the AlSb barrier thickness and the doping concentrations. We have obtained a negative differential resistance with a peak-to-valley current ratio as high as 4.7 and a peak current density of 3.5 kA/cm2 at room temperature with a 1.5-nm-thick AlSb barrier. The current transport mechanism in this tunneling structure will be discussed according to the I-V characteristics as a function of temperature.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346396
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  • 10
    Digitale Medien
    Digitale Medien
    Development of a hard x-ray imaging microscope : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2287-2289 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A hard x-ray imaging microscope based on a phase zone plate has been developed and tested. The zone plate, with a 5 cm focal length and a 0.2 μm smallest linewidth, was used to image 8 keV x rays from the samples. The imaging microscope can be used to obtain nearly diffraction-limited resolution over the entire imaging field, and its resolution is almost independent of source size and source motions. We have tested such an imaging microscope, and a resolution of about 0.4 μm was obtained. The images were obtained with an exposure time of less than 1 min, for a magnification factor of 30 in the x rays. The x rays were then converted into visible light, and another 7 times magnification were obtained by using a lens system coupled to a charge coupled device camera. The results from the imaging microscope, and possible applications, will be discussed. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1145666
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