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  • 1
    Schlagwort(e): Biochemical engineering. ; Medicine. ; Biotechnology. ; Biochemistry. ; Biomedical engineering.
    Beschreibung / Inhaltsverzeichnis: 1. K. Shimizu: Metabolic Flux Analysis Based on 13C Labeling Experiments and Integration of the Information with Gene and Protein Expression Patterns -- 2. T. Hanai, H. Honda: Application of Knowledge Information Processing Methods to Biochemical Engineering, Biomedical and Bioinformatics Field -- 3. N. Uozumi: Large Scale Production of Hairy Root -- 4. H. Honda: Large-Scale Micropropagation System of Plant Cells -- 5. M. Kino-oka, M. Taya: Development of Culture Techniques of Keratinocytes for Skin Graft Production -- 6. M. Kamihira, K.-I. Nishijima, S. Iijima: Transgenic Avian for the Production of Recombinant Proteins -- 7. M. Shinkai, A. Ito: Functional Magnetic Particles for Medical Application.
    Materialart: Online-Ressource
    Seiten: Online-Ressource
    ISBN: 9783540398769
    Serie: Advances in Biochemical Engineering/Biotechnology 91
    Sprache: Englisch
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 2
    Schlagwort(e): Biochemical engineering. ; Medicine. ; Biotechnology. ; Biochemistry. ; Biomedical engineering.
    Beschreibung / Inhaltsverzeichnis: 1. E.Y. Park: Recent Progress in Microbial Cultivation Techniques -- 2. M. Taniguchi, T. Tanaka: Clarification of Interactions Among Microorganisms and Development of Co-culture System for Production of Useful Substances -- 3. N. Nishio, Y. Nakashimada: High Rate Production of Hydrogen/Methane from Various Substrates and Wastes -- 4. K. Miyake, S. Iikima: Bacterial Capsular Polysaccharide and Sugar Transferases -- 5. T. Ohshima, M. Sato: Bacterial Sterilization and Intracellular Protein Release by Pulsed Electric Field -- 6. H. Nakano, Y. Kawarasaki, T. Yamane: Cell-free Protein Synthesis Systems: Increasing their Performance and Applications -- 7. Y. Iwasaki, T. Yamane: Enzymatic Synthesis of Structured Lipids -- 8. K.-I. Suehara, T. Yano: Bioprocess Monitoring Using Near-Infrared Spectroscopy.
    Materialart: Online-Ressource
    Seiten: Online-Ressource
    ISBN: 9783540397359
    Serie: Advances in Biochemical Engineering/Biotechnology 90
    Sprache: Englisch
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4373-4378 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: New insulating Bi14(Sr0.33Ca0.67)5O26 layered single crystals have been grown by a flux method and their crystallographic properties have been characterized. The crystals exhibited a smooth cleaved surface perpendicular to [001] orientation. The x-ray precession camera analysis indicated the crystals have rhombohedral symmetry, belonging to a Laue group of 3¯m. Furthermore, some kinds of rare-earth elements have been successfully substituted for lattice sites of the crystal. The variation of the c-axis length reflected ionic radii of the rare-earth elements substituted. Radiant luminescence has been observed in visible and infrared regions in the Er-doped crystals, which was assigned to electron transition between spin-orbit levels of trivalent Er ions in the crystal.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 162-166 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Structural and electrical properties of SrRuO3 thin films grown at various temperatures (Td) were investigated. The films grew epitaxially when Td[greater, double equals]350 °C. The dependences of crystallinity, conductivity, and carrier density on temperature were less pronounced when Td was above 400 °C, whereas crystallinity and conductivity were markedly degraded with decreasing Td when Td[less, double equals]400 °C. Owing to this unique dependence, SrRuO3 thin film deposited at Td as low as 400 °C showed an acceptable quality for application to electronic devices. For the SrRuO3/SrTiO3/SrRuO3 trilayered capacitor structure, when the top SrRuO3 layer was grown at 400 °C, a symmetric permittivity–voltage curve was observed and the SrRuO3 permittivity value of 340 ε0 was obtained. When the top SrRuO3 layer was grown at 600 °C, the permittivity value of SrTiO3 decreased and even a slight asymmetry of the permittivity–voltage curve could ever be observed. This indicates that the lower temperature deposition of SrRuO3 thin film causes less interface degradation. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 187-191 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have explored electrical trap levels inside SrTiO3 epitaxial films grown by the pulsed laser deposition method from electrical measurements of semiconducting oxide p-i-n diodes consisting of La0.85Sr0.15MnO3/SrTiO3/La0.05Sr0.95TiO3 trilayers. The prepared p-i-n diodes exhibited a marked temperature dependence in their current–voltage (I–V) characteristics. By attributing the temperature dependence of I–V curves to the space-charge limitation due to the trapped charges inside the i-SrTiO3 layer, we estimated crudely the level of the dominant trap in the SrTiO3 layer as ∼0.09 eV. The trap density was also estimated from the curve-fitting technique. At this moment, the trap densities were 1016 and 1018/cm3 when SrTiO3 layers were grown at 650 and 630 °C, respectively. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 6
    ISSN: 1540-8191
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Abstract Background: The maze operation is effective in varying degrees for the restoration of atrial function at rest. However, the atrial mechanical function under stressed conditions has not been investigated. Methods: Thirteen patients who regained normal sinus rhythm after the modified maze procedure for atrial fibrillation (Af) associated with valvular disease were enrolled in this study. A two-staged, low-dose protocol (at doses of 5 and 10 μg/kg/min) of dobutamine stress echocardiography (DSE) was performed to assess the probability of the appearance of atrial wave in 20 consecutive beats (Paw), the velocity of atrial filling wave (Av), and the early filling wave (Ev) with their ratio (A/E), as well as the left atrial area fraction (LAAF) which represents an ejection fraction of the left atrium. Results: Under resting conditions, Paw was 72% and 50% at tricuspid (T) and mitral (M) position, respectively. During dobutamine stress (5 μg/kg/min), Paw tended to increase both at T and M position (86% and 60%, respectively). Av was significantly accelerated by dobutamine stress (10 μg/kg/min) in both T (from 0.36 to 0.54 m/s) and M (from 0.46 to 0.69 m/s) valvular flow, which was accompanied by a significant increase in A/E (from 0.69 and 0.31 to 0.87 and 0.40, respectively). Although heart rate was significantly increased during dobutamine stress, LAAF remained at the same level (0.18, 0.22 and 0.19 at rest, 5 and 10 μg/kg/min) and atrial output was expected to be enhanced by dobutamine stress. Conclusion: Restoration of atrial mechanical function after the maze operation is accompanied by preserved response to dobutamine stress.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1977-1979 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Beneficial features of boron multiple delta doping (MDD) in synthetic diamond thin films are studied analytically and compared with MDD in GaAs. In spite of a deep boron level (∼0.3 eV), MDD greatly helps the thermal excitation of holes via elevation of the Fermi level toward the acceptor boron level. Thus, a hole excitation 6–7 times higher than that of the uniformly doped one is obtained. Furthermore, more than 90% of holes are in the spacer layer (i-diamond) where the mobility is high, resulting in a film conductance of the MDD structure more than 20 times higher than that of the conventional one when the same amount of boron is uniformly doped.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5295-5301 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial SrTiO3 (STO) thin films were grown successfully by rf reactive magnetron sputtering on (111)Pt/(100)MgO substrates. At present, the dielectric constant of the STO film (110 nm thick) has reached 370ε0 at room temperature. Despite the general difficulty of obtaining a high dielectric constant for the ultrathin STO films, a fairly thin STO film of 39 nm showed a large value of 240ε0. The existence of an STO degraded layer at the interface was suggested by the Fourier transform infrared spectrum observed for the ultrathin STO film of 3.5 nm. The interfacial layer with poor quality diminishes the mean dielectric constant of the STO thin films. This interfacial layer effect offers an explanation for the difficulty in obtaining a high dielectric constant of the ultrathin STO films. Moreover, the band diagram of a Cr/STO/Pt metal-insulator-other metal structure is discussed. Compared to the experimental results, a space-charge-free band diagram was concluded to be appropriate and was consistent with the observed Schottky-like leakage current and the inverse proportionality of the capacitance and the STO thickness.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6059-6063 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have examined in detail the role of the Xe additive in microwave plasma-assisted {CH4+H2} chemical vapor deposition (CVD) of diamond film. Effects of Xe addition were evident in the increased growth rate (about 50% increase for 1% Xe), without degradation of the crystallinity, and in the morphological change from the cubic to platelet grain structures. Based on the results of measuring the plasma emission spectra, Raman shift, and microwave plasma impedance, the favorable effects of Xe addition were attributed to its low dissociation and excitation energies (8.28 eV for Xe radicals), which are sufficient for the formation of CH3 but not CH2 radicals. Namely, the addition of Xe caused the CVD plasma to have higher density and lower temperature. This resulted in a large amount of atomic hydrogen and CH3 (precursors for diamond crystallization) and also a smaller amount of CH2, leading to the growth of a good-quality diamond film with a high deposition rate. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5351-5357 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial (100)SrTiO3 (STO) thin films were grown successfully on (100)La0.7Sr0.3MnO3/(100)MgO substrates by eclipse pulsed laser deposition in (O2+Ar) ambient gas. The droplet-free STO films showed marked improvement in their permittivity, 320ε0 at room temperature. Time-resolved plume observation and spectrum measurement suggested that the improvement was due to effective excitation and ionization of growth species in the plume with the aid of coexisting Ar. The STO films also showed nonlinear permittivity against the applied field, as commonly observed in single-crystal bulk STO. Using this nonlinear characteristic and hole injection into the STO valence band, we deduced the hole trap concentration in the STO films. The concentration was on the order of 1018 cm−3. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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