In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 5R ( 2001-05-01), p. 3157-
Abstract:
The band-gap energy and band-gap bowing parameter of the wurtzite InGaN alloys are investigated numerically with the CASTEP simulation program. The simulation results suggest that the unstrained band-gap bowing parameter for the wurtzite InGaN alloys is b =1.21±0.03 eV. The simulation results also show that the width of the In x Ga 1- x N top valence band at the Γ point decreases when the indium composition increases and has a value of 7.331 eV for the GaN ( x =0) and 6.972 eV for the In 0.375 Ga 0.625 N ( x =0.375).
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.3157
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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