In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 4R ( 1992-04-01), p. 979-
Abstract:
The dielectric-function spectra for InSb films rf-sputter-deposited on (0001) and (011̄0) sapphire substrates have been analyzed by using a simplified interband transition model. The film deposited on (0001) sapphire is epitaxial, while the film on (011̄0) sapphire is polycrystalline in structural properties. The model based on the Kramers-Kronig transformation includes the E 0 , E 0 +Δ 0 , E 1 , E 1 +Δ 1 , E 0 ′ , E 0 ′ +Δ 0 ′ , E 2 , E 1 ′ gaps and indirect gap ( E g L ) as the main dispersion mechanisms. The analysis suggests that the sputter-deposited InSb films include a small and a large number of void networks in the film medium for epitaxial and polycrystalline films, respectively. Dielectric-function-related optical constants, such as the refractive index and extinction coefficient, of the InSb films are also presented and analyzed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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