In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 1R ( 1998-01-01), p. 261-
Abstract:
The initial thermal oxidation on Si(100)2×1 surfaces using oxygen have been investigated with real-time ultraviolet and synchrotron-radiation photoelectron spectroscopies at substrate temperatures ( T s ) of 350–730°C and at O 2 pressures of 3×10 -7 –1×10 -5 Torr. At T s below 600°C, the oxidation proceeded following a Langmuir-type adsorption mode, while at T s above 700°C it indicated a two-dimensional island growth mode. The characteristics of the grown oxide also differ between the two temperature regions: the oxide grown in the high temperature region shows a rougher oxide/Si interface as well as a higher thermal stability against thermal decomposition as compared to the one grown in the low temperature region. These differences in the oxidation mode and the film characteristics between the two temperature regions are understood in terms of the presence of simultaneous oxide decomposition in the high temperature region.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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