In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 4S ( 2010-04-01), p. 04DF10-
Abstract:
We investigated the electrical characteristics of V/Al/Mo/Au ohmic contacts on AlGaN/GaN heterostructure field effect transistors (HFETs). A minimum ohmic contact resistivity of 1.6×10 -6 Ω cm 2 was achieved after annealing at 550 °C by optimizing V thickness to 15 nm. Cross-sectional transmission electron microscope (TEM) images exhibited a large difference in the extent of metal reaction between V/Al/Mo/Au and Ti/Al/Mo/Au. In addition to their lower contact resistivities, the low-temperature annealed V/Al/Mo/Au ohmic contacts exhibited better characteristics, such as enhanced breakdown voltages by about 100 V and smooth surface morphology, than the Ti/Al/Mo/Au ohmic contact annealed at the optimum annealing temperature.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.04DF10
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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