In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 55, No. 4S ( 2016-04-01), p. 04EG07-
Abstract:
We report on the highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) by combined application of pre-passivation oxygen (O 2 ) plasma treatment and gate field plate (FP) structures schemes. Four different devices were fabricated in this work: (1) conventional HEMT as reference device, (2) field-plated HEMT, (3) O 2 plasma-treated HEMT, (4) both field-plated and O 2 plasma-treated HEMT. Analysis of dependence of normalized dynamic R on (NDR) on gate pulse on-time ( t on ) revealed that gate-FP reduces the emission time constant (τ i ) of trapped electrons while O 2 -plasma treatment decreases the density of traps. For all measurement conditions, the device with both FP and O 2 plasma treatment exhibited the least NDR compared to devices with either FP or O 2 plasma treatment only, demonstrating for the first time the compatibility of both O 2 plasma treatment and FP schemes in mitigating current collapse.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.55.04EG07
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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