In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 5R ( 1998-05-01), p. 2422-
Abstract:
Vacancy-type defects and their annealing properties for 200 keV P + -implanted 6H-SiC were studied using monoenergetic positron beams. For the specimen with a dose of 1×10 13 /cm 2 , the mean size of the open volume of defects was estimated to be close to that of divacancies. Based on the annealing behavior of the S parameter corresponding to the annihilation of positrons trapped by vacancy-type defects, the temperature range for the annealing of vacancy-type defects was divided into three stages. Annealing behavior in stages I (200–700°C) and II (700–1000°C) was identified as the agglomeration of defects due to migrations of monovacancies and vacancy complexes such as divacancies, respectively. In stage II, near the defect-free region, the agglomeration of defects was suppressed by recombination of vacancy-type defects and interstitials. Stage III (1000–1300°C) was assigned to be the formation of extended defects and their recovery processes. The annealing behavior of the amorphous region introduced by ion implantation was also discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.2422
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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