ISSN:
1572-8986
Schlagwort(e):
Vacuum lithography
;
electron-beam resist
;
plasma-polymerized methyl methacrylate (PPMMA)
;
plasma etching
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Chemie und Pharmazie
,
Maschinenbau
,
Technik allgemein
Notizen:
Abstract The purpose of this paper is to describe a thoroughly dry lithography using plasma polymerization and plasma etching. The new lithography is named vacuum lithography because all processes are performed at reduced pressures. Resist films were formed in bell-jar-type and argon-flow-type reactors. The controllability of plasma polymerization is discussed with respect to the type of reactor and gas mixture. A pattern was delineated in the resist using an electron beam, and it was developed by plasma etching with a mixture of argon and oxygen. It was found that the quality of the plasma-polymerized resist depends strongly on the polymer structure and on the plasma etching conditions. In this experiment, the recorded values of sensitivity and γ value of plasma-polymerized methyl methacrylate were 700 µC/cm2 and 1, respectively.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00568834
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