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  • 1
    Electronic Resource
    Electronic Resource
    Ion mixing and thermochemical properties of markers in Cu (1986)
    Springer
    Applied physics 41 (1986), S. 171-174 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Markers of Nb, Ru, Ag, In, Sb, Hf, Pt, Au, and Bi in Cu were mixed by irradiation with 750 keV Kr at 77 K and analyzed in situ by backscattering of 1.9 MeV He+. Cu with Pt and Au markers were also irradiated and analyzed at 7 K. The results were identical to those obtained at 77 K results. The measured mixing efficienciesDt/øF D , for the various markers correlate with their respective impurity tracer diffusivities and impurity-vacancy binding energies in Cu. The correlation suggests that diffusion by a vacancy mechanism during a thermal spike as an important process in ion mixing of marker atoms in Cu.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616835
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Erratum: Experimental evidence for Coulomb charging effects in submicron Bi-2212 stacks [JETP Lett. 69, No. 1 84–90 (10 January 1999)] (1999)
    Springer
    JETP letters 69 (1999), S. 640-643 
    Details
    ISSN: 1090-6487
    Keywords: 85.25.Cp ; 74.50.+r ; 99.10.+g
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567973
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  • 3
    Electronic Resource
    Electronic Resource
    Experimental evidence for Coulomb charging effects in submicron Bi-2212 stacks (1999)
    Springer
    JETP letters 69 (1999), S. 84-90 
    Details
    ISSN: 1090-6487
    Keywords: 85.25.Cp ; 74.50.+r
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Focused ion beam (FIB) and ion milling techniques are developed for the fabrication of Bi2Sr2CaCu2O8+1d (Bi-2212) stacked junctions with in-plane size L ab ranging from several microns down to the submicron scale without degradation of superconducting transition temperature T c. It is found that the behavior of submicron junctions (L ab〈1 µm) is quite different from that of larger ones. The critical current density is considerably suppressed, the hysteresis and multibranched structure of the current-voltage (I-V) characteristics are eliminated, and a periodic structure of current peaks appears reproducibly on the I-V curves at low temperatures. The period ΔV of the structure is consistent with the Coulomb charging energy of a single pair, ΔV=e/C, where C is the effective capacitance of the stack. It is considered that this behavior originates from the Coulomb blockade of the intrinsic Josephson tunneling in submicron Bi-2212 stacks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567988
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  • 4
    Electronic Resource
    Electronic Resource
    Noise characteristic design of CMOS source follower and voltage amplifier for active semiconductor microelectrodes for neural signal recording (2000)
    Springer
    Medical & biological engineering & computing 38 (2000), S. 469-472 
    Details
    ISSN: 1741-0444
    Keywords: Extracellular recording ; Active neural probe ; CMOS ; Source follower ; Differential amplifier ; Signal-to-device-noise ratio
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Notes: Abstract A noise performance design method for the pre-amplifiers of an active neural probe is given. The on-chip circuitry of the active neural probe consists of CMOS devices that show high-/ low-frequency noise, so that the device noise can become dominant. Analysis of the signal-to-device-noise ratio (SDNR) for the CMOS source follower buffer and two-stage differential voltage amplifier is given. Closed-form expressions for the output noise power are derived and exploited to tailor the parameters that are controllable during circuit design. The output SDNR is calculated considering the real extracellular action potentials, the electrode-electrolyte interface and the noise spectrum of CMOS devices from typical foundries. It is shown that the output device noise power can be much higher than the output signal power if the devices at the input stage of the pre-amplifier are made as small as given fabrication technology permits. Quantitative information of the circuit parameters to achieve an SDNR higher than 5 for neural spikes with 60μV amplitude are provided for both preamplifier types.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02345018
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