In:
ECS Transactions, The Electrochemical Society, Vol. 50, No. 3 ( 2013-03-15), p. 139-142
Abstract:
This paper describes experimental results to achieve improved gate breakdown voltages by using multi-field-plate technique for AlGaN/GaN HEMTs fabricated on a SiC substrate. Also described are the results to reduce gate leakage current by fabricating arrays of AlGaN/GaN HEMTs on a Na-flux free-standing GaN substrate with a low dislocation density of less than 106 cm-2.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
DOI:
10.1149/05003.0139ecst
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2013
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