In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. 3R ( 2004-03-01), p. 1199-
Kurzfassung:
A new probe method, which can measure wafer voltage directly from the wafer back-side without fluctuating the plasma, was developed. This method clarified the effect of the bias power, gas pressure and gas component on wafer V pp , V dc , and V dc / V pp . In addition, current, voltage, and phase shift were measured with an impedance monitor (IM) installed between the matching network and the bias electrode. Furthermore, wafer V pp was calculated from IM data according to a devised equivalent circuit model. It was found that calculated wafer V pp agrees with actual wafer V pp within 3.4% when bias power is ranged from 200 W to 500 W.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.43.1199
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2004
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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