In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 7R ( 1998-07-01), p. 3889-
Abstract:
In order to minimize the pattern transfer difference (PTD) between a
dense cell pattern and isolated pattern, we investigated the effects of additive gases (O 2 , HBr, and N 2 ) and bias power in Cl 2 -based polysilicon
gate etching. When the flow rate of N 2 was increased, a larger PTD was
due to a marked increase in the critical dimension bias in the isolated pattern. The PTD was also influenced to a large extent by the bias power.
When the bias power was increased, there occurred a linear increase of the PTD in Cl 2 /N 2 plasma, which also exhibited a striking dependence on
the bias power in Cl 2 /HBr plasma; however, in Cl 2 /O 2 plasma, the PTD
showed no notable the dependence on bias power. From these data, it is proposed that the PTD between the two may be due to the ion scattering
and polymer build-up difference.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.3889
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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