In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 2R ( 2001-02-01), p. 798-
Abstract:
Structural changes in a resist resulting from plasma exposure during the reactive ion etching (RIE) process were studied using 13 C-NMR analysis and Fourier transform IR spectroscopy (FT-IR). Two types of resist were chosen containing different amounts of diazonaphthoquinone derivative as an initiator with the same type of base polymer, cresol novolak resin. It was found that a slightly soluble layer was formed by the cross-linking reaction of the main chain of novolak resin as a result of plasma exposure in the case of the resist with a low amount of photosensitizer. The molecular weight concurrently decreased, probably due to the chain-scission of the main chain of novolak resin. On the other hand, in the resist containing a larger amount of photosensitizer, the molecular weight of the material increased, probably due to the occurrence of some type of cross-linking reaction such as thermal condensation. From these results, we obtained some guidelines for developing a resist stripping process without a residue.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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