In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 5R ( 1998-05-01), p. 2451-
Abstract:
The interfacial reaction between Al metal and boron-doped polysilicon was
investigated to understand the mechanism of link formation in the planar type antifuse with a polysilicon pad and two Al electrodes. In the antifuse, the Si–Al alloy filament
with a low resistance was formed only on the boron-doped polysilicon pad, not on the phosphorus-doped or undoped polysilicon pads. After annealing Al/boron-doped
polysilicon at 400°C for 20 min, an Al-B compound (AlB 2 ) was found by the reaction
between Al metal and solute borons at the grain boundaries of polysilicon using Auger electron spectroscopy, X-ray diffractometer, and X-ray photoelectron spectroscopy. In
the planar type antifuse device, the formation of AlB 2 at the grain boundaries might act
as a seed for the conductive filament formation by supplying Al from the positive electrode. After forming a low resistance Si–Al alloy filament, it grows toward the
negative electrode by the reaction between supplied Al and highly reactive solute borons segregated at the grain boundaries.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.2451
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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