In:
Journal of Semiconductors, IOP Publishing, Vol. 44, No. 8 ( 2023-08-01), p. 081701-
Abstract:
Developing low-cost, efficient, and stable photocatalysts is one of the most promising methods for large-scale solar water splitting. As a metal-free semiconductor material with suitable band gap, graphitic carbon nitride (g-C 3 N 4 ) has attracted attention in the field of photocatalysis, which is mainly attributed to its fascinating physicochemical and photoelectronic properties. However, several inherent limitations and shortcomings—involving high recombination rate of photocarriers, insufficient reaction kinetics, and optical absorption—impede the practical applicability of g-C 3 N 4 . As an effective strategy, vacancy defect engineering has been widely used for breaking through the current limitations, considering its ability to optimize the electronic structure and surface morphology of g-C 3 N 4 to obtain the desired photocatalytic activity. This review summarizes the recent progress of vacancy defect engineered g-C 3 N 4 for solar water splitting. The fundamentals of solar water splitting with g-C 3 N 4 are discussed first. We then focus on the fabrication strategies and effect of vacancy generated in g-C 3 N 4 . The advances of vacancy-modified g-C 3 N 4 photocatalysts toward solar water splitting are discussed next. Finally, the current challenges and future opportunities of vacancy-modified g-C 3 N 4 are summarized. This review aims to provide a theoretical basis and guidance for future research on the design and development of highly efficient defective g-C 3 N 4 .
Type of Medium:
Online Resource
ISSN:
1674-4926
,
2058-6140
DOI:
10.1088/1674-4926/44/8/081701
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2023
detail.hit.zdb_id:
2484682-X
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