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  • American Institute of Physics (AIP)  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Probing microwave properties of high-Tc films via small dc magnetic fields (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 505-507 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that the combination of vortex matter and rf measurements yields new insight into the microwave properties of superconducting thin-film devices, both in small magnetic fields and zero field. The comparison of field-cooled and different types of field-sweep experiments on coplanar high-Tc thin-film resonators shows that the microwave properties strongly depend on magnetization and vortex distribution in the superconducting film as well. Thus, using vortices as a kind of local probe for the microwave properties leads to a consistent explanation of the microwave power handling in nonzero and zero magnetic fields. In a model that is derived from the experiments, the nonlinear microwave behavior is explained by the limitation of the total current density in the device considering contributions of the rf field and the screening of the magnetic field and vortices to the current. The limiting current value seems to be related to the dc critical current of the superconductor. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1487902
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  • 2
    Electronic Resource
    Electronic Resource
    Improved designs of tunable ferroelectric capacities for microwave applications (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2150-2152 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial SrTiO3 films are deposited by on-axis magnetron sputtering on CeO2-buffered r-cut sapphire. The ferroelectric films possess low losses (e.g., tan δ(approximate)0.001–0.004 at 300 K) and a large tunability at small electric fields. Different complex designs for ferroelectric capacities are prepared via dry etching ranging from standard designs to those in which the ferroelectric material is restricted to the gap of the capacity. The resulting capacity data can be explained in terms of an analytic model for parallel capacities. Due to modifications and optimization of the design, the quality factors for an improved capacity design exceeds the requirement for most applications K〉45 already for extremely small voltages U(approximate)18 V, which demonstrates the good properties of the design in combination with the quality of our ferroelectric films. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459486
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    Paper (German National Licenses)
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