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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 419-421 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using the pulsed laser deposition technique, high-temperature superconducting YBa2Cu3O7−x (YBCO) films were grown on Si(001) with a 36 nm single-crystal 〈001〉 oriented CoSi2 buffer layer. The films, grown at a substrate temperature of ∼700 °C, have a metallic resistive temperature dependence with zero resistance at 85 K. X-ray diffraction, scanning electron microscopy, and ion channeling studies show that the YBCO films are polycrystalline but are strongly c-axis oriented normal to the Si substrate. Diffusion at the interface between the YBCO film and silicide buffer layer was minimized. This is essential to the growth of high-temperature superconducting films on Si substrates.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4107-4109 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin metallic, oriented crystalline NiSi2 films that are suitable for additional epitaxial growth have been formed on amorphous SiO2 layers on Si substrates. The orientation of the Si substrate is maintained in the NiSi2 film as if the SiO2 is not present. This was achieved by combining the separation by implantation of oxygen process and e-beam evaporation techniques. The results are comparable with NiSi2 films formed directly on Si. This technique should, in general, be applicable to other silicides that have been epitaxially grown on Si.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Y1Ba2Cu3O7−x superconducting thin films were grown in situ on polycrystalline MgO substrates by a chemical vapor deposition process that closely couples the sublimation temperatures of the elemental sources to that of the substrate during deposition. It was found that the best quality films were achieved with a controlled ramping of the substrate temperature from 850 °C, at the onset of deposition, down to 750 °C at the end of deposition. The films were analyzed by Rutherford backscattering (RBS), scanning electron microscopy (SEM), x-ray diffractometry (XRD), and four-point resistivity probe. The results of these studies showed that the films were highly c-axis oriented, had near-stoichiometric composition, and exhibited Tc,onset=90 K, Tco=85 K, and had a Jc=2×105 A/cm2 at 77 K in zero magnetic field. A model is proposed for the effect of such temperature control on the CVD growth mechanism of high-quality YBCO films.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2043-2045 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown a-axis oriented YBa2Cu3O7−x (YBCO) thin films on Si(100) substrates with (110) oriented insulating buffer layers of cerium dioxide (CeO2) using the pulsed laser deposition technique. The films are highly oriented and textured as determined by θ–2θ x-ray diffraction, x-ray pole-figure scan, scanning electron microscopy, Rutherford backscattering spectroscopy, and ion channeling. No diffusion at the interface has been found at growth temperatures up to 760 °C, indicating the CeO2 is a chemically stable and structurally compatible intermediate material for the growth of YBCO on Si. A zero resistance superconducting transition temperature of 87 K and a critical-current density (Jc) of 1.5×105 A/cm2 at 75 K have been measured; Jc obtained represents the highest value for the a-axis oriented YBCO films.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 598-604 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Computer simulations and computational diagnostics are used to study a Monte Carlo Brownian walker moving through a glass of immobile force centers. Clear evidence for distinct trapping, hopping, and hindered-diffusive regimes is seen in the mean-square displacement and the probability distribution P(r,t) for a step r during delay t. In the hopping regime distinct time scales for intratrap and intertrap motion are apparent; probe localization and time scale separation depend inversely on temperature T. In the hindered-diffusion regime, the effective diffusion coefficient D¯ follows an Arrhenius temperature dependence. In this regime, 〈r2(t)〉 is very nearly linear in t, even for walkers that have only diffused a small fraction of the matrix particle nearest-neighbor distance. We infer that analytic calculations using relatively low-order time expansions should give reasonable values for D¯ of probe particles in our glass. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Publication Date: 2015-06-02
    Description: The spin orientation dependence of magnetic hysteresis and microwave ferromagnetic resonance data are investigated in FeCoBSi amorphous thin films. Demagnetization effect allows the weak interface-rooted out-of-plane anisotropy to build up local spin orientation domains under the dominant in-plane anisotropy. As a result, two phase magnetization reversal and double-peak ferromagnetic resonance traces with varying damping behavior are observed. Due to the distribution of in-plane and out-of-plane spin orientations, the ferromagnetic resonance bandwidth has been extensively expanded with the full width at half maximum increased from 1.2 GHz to 3.5 GHz.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 7
    Publication Date: 2015-02-18
    Description: In multifrequency atomic force microscopy (AFM) to simultaneously measure topography and material properties of specimens, it is highly desirable that the higher order resonance frequencies of the cantilever probe are assigned to be integer harmonics of the excitation frequency. The harmonic resonances are essential for significant enhancement of the probe's response at the specified harmonic frequencies. In this letter, a structural optimization technique is employed to design cantilever probes so that the ratios between one or more higher order resonance frequencies and the fundamental natural frequency are ensured to be equal to specified integers and, in the meantime, that the fundamental natural frequency is maximized. Width profile of the cantilever probe is the design variable in optimization. Thereafter, the probes were prepared by modifying a commercial probe through the focused ion beam (FIB) milling. The resonance frequencies of the FIB fabricated probes were measured with an AFM. Results of the measurement show that the optimal design of probe is as effective as design prediction.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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