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  • 1
    Electronic Resource
    Electronic Resource
    Erratum: "Optical investigation of quaternary GalnAsSb/AlGaAsSb strained multiple quantum wells'' [Appl. Phys. Lett. 67, 3432 (1995)] (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2591-2591 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116792
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of InGaAs/InAlAs strained double quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5348-5351 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements have been performed on a In0.82Ga0.18As/In0.52Al0.48As strained double quantum wells with narrow well widths of 38 and 48 A(ring). The band offset ratio Qc in this narrow quantum well structures was found to be 0.70±0.01. Based on a steady-state photoluminescence model, the temperature and laser excitation dependences of the luminescence intensity allow us to conclude that the thermal quenching of luminescence is controlled by the quantum transport of the photogenerated carriers for temperature below 125 K, while the dominant luminescence quenching mechanism above 150 K is a thermally activated detrapping of carriers from the wells into barriers, followed by nonradiative recombination in the barriers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363474
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  • 3
    Electronic Resource
    Electronic Resource
    Microstructure, heat treatment, and oxidation study of porous silicon formed on moderately doped p-type silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 492-496 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A porous Si (PS) layer with a spongy microstructure on top of a dendritic microstructure was fabricated on a moderately doped p-type Si wafer using a two-step anodization process. This illustrates that in addition to substrate doping, anodization current density also has an effect on the porous Si microstructure. A preoxidation heat treatment of the spongy-type porous Si was found to change the porous structure significantly, making it more difficult to fully oxidize the layer at low temperatures. However, dendritic porous Si can better withstand the heat treatment without suffering noticeable changes in structure. X-ray photoelectron spectroscopy, infrared spectroscopy, and electrical breakdown tests were used to analyze the oxidized porous Si samples. The oxidation process and the resultant oxide were found to depend on several factors, including the porosity, the microstructure itself (e.g., spongy or dendritic-type), and the heat treatment history prior to oxidation. With similar porosity, dendritic PS is easier to oxidize compared to spongy PS. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364107
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  • 4
    Electronic Resource
    Electronic Resource
    Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4491-4494 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Residual donors in the high purity InP epitaxial layer grown by gas source molecular beam epitaxy (GSMBE) have been identified by a photothermal ionization technique in a magnetic field. The dominant residual donors in GSMBE InP are identified to be silicon and sulfur. The Zeeman effect of the hydrogenic donors has also been investigated. The 1s–3p photothermal ionization transitions of the hydrogenic donors are observed even at zero magnetic field. The photoconductivity transition related to the LO phonon is observed and discussed. Furthermore, the photothermal ionization transitions arising from different chemical donors are also clearly resolved in a magnetic field. From the spectral peaks in magnetic field, the electron effective mass m* in GSMBE InP is estimated to be (0.0817±0.0002)m0. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363410
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  • 5
    Electronic Resource
    Electronic Resource
    The protective coatings of NdFeB magnets by Al and Al(Fe) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4854-4856 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NdFeB permanent magnets are coated by two different methods, dip coating and evaporation coating, with Al. It is found that an intermetallic reaction has occurred and formed a dominant phase of FeAl2.5Bx at the interface between the Al coating and the magnet material. Such reaction enhances strong bonding between the coating and the magnet. When Al(Fe) is used for the coating, no detectable intermetallic phase is observed, and therefore the amount of magnet material is conserved. We have studied the effect of the intermetallic phase on corrosion protection of the magnet. It is found that this phase is less resistive towards HNO3 solution than pure Al; but it is more resistive towards NaOH and NaCl. The investigation of the changes of microstructures of the coatings under different tempering conditions have also been carried out. The results show that the heat treatment at 500 °C for 10 min for a ∼ 2 μm thick Al coating by evaporation can produce an optimal layer of intermetallics. If the temperature is too low, the coating will not adhere to the magnet or if too high, it will fully react with the magnet and produce a rough coating surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361632
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  • 6
    Electronic Resource
    Electronic Resource
    Deep levels in nitrogen-implanted n-type GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4261-4263 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ti/n-GaAs Schottky barrier diodes were prepared on nitrogen-implanted n GaAs. The Schottky barrier height of the diodes was found to be 0.96 eV, 0.12 eV higher than that of the samples without N implantation. Four distinctive electron traps E1(0.111), E2(0.234), E3(0.415), and E4(0.669) and one hole trap, H(0.545), have been observed with deep level transient spectroscopy. Defect models of these deep levels are proposed and the role of H(0.545) in the Schottky barrier formation is also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359889
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  • 7
    Electronic Resource
    Electronic Resource
    Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2006-2009 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible electroluminescence (EL) has been reported from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si diodes at room temperature. The Si-rich silicon oxide films, with thickness of about 40 A(ring), were grown using the magnetron sputtering technique. At forward bias of 4 V, EL spectra with peak energy of 1.9 eV and full width at half maximum of 0.5 eV can be observed from diodes with such extra thin Si-rich oxide films having not been annealed. EL peak energy shows a small red shift under low forward bias but does not shift again when increasing the bias further. Annealing at 800 °C, EL spectra widen and show several shoulders at about 1.5, 2.2, and 2.4 eV, and the EL peak energy shows blue shift with increasing forward bias. These results are shown to be consistent with light emission at several types of luminescence centers in the Si-rich silicon oxide films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360175
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  • 8
    Electronic Resource
    Electronic Resource
    Erratum: Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells [J. Appl. Phys. 78, 5696 (1995)] (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4474-4474 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362717
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  • 9
    Electronic Resource
    Electronic Resource
    Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5696-5700 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the dependence on the excitation power and temperature of the photoluminescence emission from a quaternary Ga0.75In0.25As0.04Sb0.96/Al0.22Ga0.78As 02Sb0.98 strained multiple- quantum-well structure grown by molecular-beam epitaxy. Sharp exciton resonances are observed up to room temperature and have been attributed to localized excitons for temperatures ≤80–100 K and to free excitons at higher temperatures up to room temperature by a comparative study with temperature-dependent absorption spectroscopy. We conclude that the dominant luminescence quenching mechanism in this quaternary system is mainly due to the trapped excitons thermalizing from the localized regions below 100 K, and the thermal carrier activation from the first electron and heavy-hole subbands to the second electron and heavy-hole subbands at higher temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359628
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  • 10
    Electronic Resource
    Electronic Resource
    Temperature-dependent exciton behavior in quaternary GaInAsSb/AlGaAsSb strained single quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2139-2141 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the temperature-dependent exciton behavior in a quaternary Ga0.67In0.33As0.01Sb0.99/Al0.25Ga0.75As 0.2Sb0.98 strained single-quantum-well (SQW) structure by photoluminescence spectroscopy. Strong exciton resonances are observed and have been attributed to localized excitons below 80 K and to free excitons at high temperatures. Nevertheless, we show that the experimental results of stronger exciton–phonon coupling in the quaternary SQW structure would lead to partial ionization of free excitons at temperatures above 125 K, in good agreement with the line-shape analysis of the luminescence spectra which clearly shows the presence of band-to-band recombination. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361072
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