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  • American Institute of Physics (AIP)  (5)
  • European Geosciences Union  (1)
  • 1
    Publication Date: 2022-05-27
    Description: © The Author(s), 2021. This article is distributed under the terms of the Creative Commons Attribution License. The definitive version was published in Phillips, H. E., Tandon, A., Furue, R., Hood, R., Ummenhofer, C. C., Benthuysen, J. A., Menezes, V., Hu, S., Webber, B., Sanchez-Franks, A., Cherian, D., Shroyer, E., Feng, M., Wijesekera, H., Chatterjee, A., Yu, L., Hermes, J., Murtugudde, R., Tozuka, T., Su, D., Singh, A., Centurioni, L., Prakash, S., Wiggert, J. Progress in understanding of Indian Ocean circulation, variability, air-sea exchange, and impacts on biogeochemistry. Ocean Science, 17(6), (2021): 1677–1751, https://doi.org/10.5194/os-17-1677-2021.
    Description: Over the past decade, our understanding of the Indian Ocean has advanced through concerted efforts toward measuring the ocean circulation and air–sea exchanges, detecting changes in water masses, and linking physical processes to ecologically important variables. New circulation pathways and mechanisms have been discovered that control atmospheric and oceanic mean state and variability. This review brings together new understanding of the ocean–atmosphere system in the Indian Ocean since the last comprehensive review, describing the Indian Ocean circulation patterns, air–sea interactions, and climate variability. Coordinated international focus on the Indian Ocean has motivated the application of new technologies to deliver higher-resolution observations and models of Indian Ocean processes. As a result we are discovering the importance of small-scale processes in setting the large-scale gradients and circulation, interactions between physical and biogeochemical processes, interactions between boundary currents and the interior, and interactions between the surface and the deep ocean. A newly discovered regional climate mode in the southeast Indian Ocean, the Ningaloo Niño, has instigated more regional air–sea coupling and marine heatwave research in the global oceans. In the last decade, we have seen rapid warming of the Indian Ocean overlaid with extremes in the form of marine heatwaves. These events have motivated studies that have delivered new insight into the variability in ocean heat content and exchanges in the Indian Ocean and have highlighted the critical role of the Indian Ocean as a clearing house for anthropogenic heat. This synthesis paper reviews the advances in these areas in the last decade.
    Description: Helen E. Phillips acknowledges support from the Earth Systems and Climate Change Hub and Climate Systems Hub of the Australian Government's National Environmental Science Programme and the ARC Centre of Excellence for Climate Extremes. Amit Tandon acknowledges the US Office of Naval Research. This is INCOIS contribution no. 437.
    Repository Name: Woods Hole Open Access Server
    Type: Article
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To improve the poor thermal stability of NdFeB magnets, we add Dy, Co, Al, and Nb into the magnets with nominal composition (Nd0.9Dy0.1)17FebCo5Al1.7B7Nbx (x=0.3–1.5 at. %). We have measured their Hcj at room temperature. The data of irreversible loss (IL) of open-circuit flux density at different temperatures are also obtained using cylinder samples with L/D=0.7 (P=2). We have also compared the IL of the same sample with different P. The results show that Hcj increases linearly with Nb content in average 4.8 kOe/Nb at. %. The higher the Hcj and/or the longer the sample is, the lower the absolute value of IL is. The IL of sample with x=1.5 at. % and L/D=0.7 is less than 5% even at 150 °C. Nb effectively achieves the thermal stability of the magnets. The SEM has been used to observe the microstructure of the surface and cross section of a typical sample.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth and electrical characterization of Si delta-doped GaInP grown by low-pressure metalorganic chemical vapor deposition are reported in this article. It was found that the sheet carrier density saturated as a function of doping time or flow rate. Because of the limitations of Hall-effect measurements, the saturation was explained as the result of electron population in satellite L valley. The mobility enhancement was observed for the delta-doped structure with an enhancement factor of 2–3. A sharp capacitance–voltage profile with a full width at half-maximum of 30 A(ring) was obtained. Depletion-mode Si delta-doped GaInP field-effect transistors with a gate length of 2 μm and gate width of 50 μm were fabricated and showed good device pinch-off characteristics. The extrinsic maximum transconductance of 92 mS/mm was obtained and a broad plateau transconductance profile was observed to confirm the electron confinement in the V-shape potential well of a delta-doped GaInP layer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 611-612 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous silicon superlattice was fabricated and its Raman spectra were examined. The clear zone-folded doublets from longitudinal acoustic phonons were obtained up to fourth order. A similar phenomenon was not observed in ordinary porous silicon. Using the elastic continuum model, we calculated the frequencies of these folded doublets and the obtained results were in excellent agreement with the experimental ones. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon (poly-Si) films grown by ultrahigh-vacuum chemical vapor deposition (UHVCVD) system and then annealed by excimer laser at room temperature have been investigated for the applications in polycrystalline silicon thin-film transistors (poly-Si TFTs). The results showed that the grain size of the laser-annealed poly-Si film decreased with laser energy density when a lower laser energy density below 157.7 mJ/cm2 was used. At about the threshold laser energy density (∼134.5 mJ/cm2), the finest grain structure could be obtained due to the partial melting in the top layer of the film. When the energy density of the excimer laser was larger than the threshold energy density, the large grain growth was initiated. The largest grain structure could be obtained at ∼184 mJ/cm2, while its surface roughness was better than that of the nonannealed UHVCVD poly-Si films. The surface roughening was suggested to arise from the specific melt-regrowth process but not the rapid release of hydrogen or capillary wave mechanism derived from laser-annealed amorphous silicon. By use of the laser-annealed UHVCVD poly-Si films as the active layer, the fabricated poly-Si TFT exhibited a field-effect mobility of 138 cm2/V s, a subthreshold swing of 0.8 V/dec, a threshold voltage of 3.5 V, and an on/off current ratio of ∼106. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Publication Date: 2015-02-27
    Description: We report a systematic study about the effect of cobalt concentration in the growth solution over the crystallization, growth, and optical properties of hydrothermally synthesized Zn 1−x Co x O [0 ≤ x ≤ 0.40, x is the weight (wt.) % of Co in the growth solution] nanorods. Dilute Co concentration of 1 wt. % in the growth solution enhances the bulk crystal quality of ZnO nanorods, and high wt. % leads to distortion in the ZnO lattice that depresses the crystallization, growth as well as the surface structure quality of ZnO. Although, Co concentration in the growth solution varies from 1 to 40 wt. %, the real doping concentration is limited to 0.28 at. % that is due to the low growth temperature of 80 °C. The enhancement in the crystal quality of ZnO nanorods at dilute Co concentration in the solution is due to the strain relaxation that is significantly higher for ZnO nanorods prepared without, and with high wt. % of Co in the growth solution. Second harmonic generation is used to investigate the net dipole distribution from these coatings, which provides detailed information about bulk and surface structure quality of ZnO nanorods at the same time. High quality ZnO nanorods are fabricated by a low-temperature (80 °C) hydrothermal synthesis method, and no post synthesis treatment is needed for further crystallization. Therefore, this method is advantageous for the growth of high quality ZnO coatings on plastic substrates that may lead toward its application in flexible electronics.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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