In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 26, No. 8A ( 1987-08-01), p. L1398-
Abstract:
We have studied the conditions causing amphoteric doping in Si-implanted Czochralski GaAs by photoluminescence and Hall effect measurements. Wafers of either undoped or In-doped GaAs were implanted and capped with either SiN x or SiO x before the activation anneal. Localized, strong amphoteric doping was observed only in SiN x capped In-doped wafers. In all other annealed wafers only donor activity was detected. This effect is explained by the point defect reactions due to the presence of In and the interaction of the GaAs with the capping material during annealing.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.26.L1398
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1987
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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