In:
Journal of Applied Physics, AIP Publishing, Vol. 66, No. 12 ( 1989-12-15), p. 5833-5836
Abstract:
The out-diffusion of Ga atoms during thermal annealing from a GaAs substrate into an SiOxNy encapsulating film has been studied using secondary ion mass spectrometry. The concentration of Ga atoms detected within the SiOxNy encapsulant annealed at 850 °C is found to increase with increasing the oxygen content of the encapsulant. The results are well correlated with the concentration change of the electron trap EL5 (Ec−ET =0.42 eV) evaluated from deep-level transient spectroscopy. We conclude that the controlled Ga out-diffusion by SiOxNy capped annealing causes enhanced electrical activation of Si implants and the generation of the EL5 trap during thermal annealing is ascribed to the Ga out-diffusion.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1989
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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