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  • 1985-1989  (11)
  • 1980-1984  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Correlation between the cohesive energy and the onset of radiation-enhanced diffusion in ion mixing (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2615-2617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A correlation between the cohesive energy of elemental solids and the characteristic temperature Tc for the onset of radiation-enhanced diffusion during ion mixing is established. This correlation enables one to predict the onset of radiation-enhanced diffusion for systems which have not yet been investigated. A theoretical argument based on the current models of cascade mixing and radiation-enhanced diffusion is provided as a basis for understanding this observation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337131
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  • 2
    Electronic Resource
    Electronic Resource
    Kinetics of NiAl3 growth induced by steady-state thermal annealing at the Ni-〈Al〉 interface (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1821-1825 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Substrates of large grained aluminum crystals were prepared by the strain annealing technique, and Ni films were vacuum evaporated on these substrates after an in situ sputter cleaning process. Upon thermal annealing of samples in vacuum, a laterally uniform growth of NiAl3 is observed, starting from 330 °C, without any indication of boundary diffusion effects. The aluminide phase grows as (duration)1/2 after an initial incubation period with an activation energy of 1.4 eV, i.e., K=x2/t=0.387 (cm2/s)exp(−1.4 eV/kT) for 600 K〈T〈650 K. Impurities, either at the interface or inside the Ni film, retard this reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339563
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of ion irradiation on conductivity of CrSi2 thin films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3077-3080 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical resistivity measurements are used to study damage in CrSi2 thin films induced by Ne, Ar, or Xe ion irradiation over a fluence range of 1010–1015 ions cm−2. Irradiation produces a factor of 5–12 increase in film conductivity at the higher fluences. The influence of defect generation and recombination is evident. We speculate that formation of a compound defect is a dominant factor enhancing film conductivity. A temperature dependence at low fluences is reported and tentatively identified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336931
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  • 4
    Electronic Resource
    Electronic Resource
    Transition-metal silicides formed by ion mixing and by thermal annealing: Which species moves? (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3087-3093 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The moving species during the formation of Pt2Si, Ni2Si, and CrSi2 by both ion mixing with 300–600 keV Xe ions and thermal annealing is identified with inert markers using backscattering spectrometry. Samples of metal-on-silicon and silicon-on-metal have been used, evaporated on SiO2 substrates with two very thin markers (Mo for Pt2Si, W for Ni2Si and CrSi2) placed at the metal–silicon interface, and at the bottom interface with the SiO2 substrate. Monitoring the separation of the two markers as a function of the amount of silicide formed determines the ratio of atomic transport through the growing silicide layer. The results establish that the dominant moving species in both silicide formation processes is the same for the refractory metal-silicide CrSi2, e.g., Si, whereas different atomic transport ratios are found in the case of the near-noble metal silicides Pt2Si and Ni2Si. This outcome is discussed in terms of high-temperature effects during thermal formation of transition-metal silicides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335809
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  • 5
    Electronic Resource
    Electronic Resource
    TiAl3 formation by furnace annealing of Ti/Al bilayers and the effect of impurities (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2800-2807 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactions of Ti/Al couples induced by furnace annealing were investigated (at elevated temperature) using large-grained Al substrates and vacuum-evaporated bilayers of both sequences. 4 He MeV backscattering spectrometry was principally used to monitor the reactions. Profiles of oxygen impurity were obtained by elastic 16 O(α,α)16 O resonant scattering. In the range of 460–515 °C, TiAl3 forms as a laterally uniform layer at the Ti/Al interface. The thickness of this compound layer increases as (annealing time)1/2. The activation energy is 1.9–2.0±0.1 eV. For evaporated bilayers on an oxidized Si substrate, the sequence of the bilayers does not effect the growth mechanism of TiAl3 , but the growth rate of samples with the Ti on top is lower than that of samples with Al on top, that is, oxygen in Ti/Al samples can reduce the reaction rate by decreasing the pre-exponential factor. Oxygen already contained in the Ti film and oxygen from the annealing ambient are incorporated in the growing TiAl3 compound during thermal annealing. In addition, a TiAl3 layer also forms at the free Ti surface during vacuum annealing when the oxygen-containing contaminants in the ambient are minimized. So far, we succeeded in accomplishing this only for large-grained Al substrates. We conclude that the formation of the TiAl3 compound at the surface is controlled by nucleation and depends sensitively on the condition of the surface layer of the Ti film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340981
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  • 6
    Electronic Resource
    Electronic Resource
    WxN1−x alloys as diffusion barriers between Al and Si (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2787-2789 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactively sputtered tungsten nitride (WxN1−x) layers are investigated as diffusion barriers between Al overlayers and Si shallow n+ -p junctions. Both amorphous W80 N20 and polycrystalline W60 N40 films were found to be very effective in preserving the integrity of the n+ -p diodes for 30-min vacuum annealing up to 575 °C. Diode failure at higher temperatures is caused by localized penetration of Al into 〈Si〉 through the WxN1−x barriers. The effectiveness of the barrier decreases for polycrystalline W90 N10 and is worse for pure W.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341579
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  • 7
    Electronic Resource
    Electronic Resource
    Reaction of evaporated Ti films with large-grained Al substrates (1988)
    Springer
    Applied physics 46 (1988), S. 35-38 
    Details
    ISSN: 1432-0630
    Keywords: 73.40 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have studied the reaction kinetics of titanium films on large-grained aluminium substrates during furnace annealing in vacuum for temperatures between 450–550°C. Oxygen was profiled by elastic resonance16O(α, α)16O backscattering. A TiAl3 aluminide layer always forms at the Ti/Al interface. In addition, a second TiAl3 layer grows at the free Ti surface when the contamination of the annealing ambient by oxygen-carrying species is reduced during annealing. Otherwise, the nucleation of the second compound layer is inhibited by an oxygen-rich surface layer of the Ti.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615135
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  • 8
    Electronic Resource
    Electronic Resource
    Properties of reactively sputtered Mo1−x O x films (1988)
    Springer
    Applied physics 45 (1988), S. 265-270 
    Details
    ISSN: 1432-0630
    Keywords: 81.15.-z ; 81.60.Bb
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Molybdenum oxide (Mo1−xOx) films were prepared by reactive rf sputtering of a Mo target in O2/Ar plasma. The dependence of film properties on various sputtering parameters is investigated. The atomic percentage of oxygen (x) in the Mo1−xOx films decreases with sputtering power and increases with the partial pressure of oxygen. Mo1−xOx films that exhibit metallic conductivities can be obtained over a wide range of sputtering conditions. The intrinsic film stress of conducting Mo1−xOx is compressive. Such M1−xOx films were shown by backscattering spectrometry to be excellent diffusion barriers between Al and Si up to 600 °C annealing for 30 min.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617930
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  • 9
    Electronic Resource
    Electronic Resource
    Late quaternary sediments in Lake Zürich, Switzerland (1983)
    Springer
    Environmental geology 5 (1983), S. 191-205 
    Details
    ISSN: 1432-0495
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Notes: Abstract Lake Zürich occupies a glacially overdeepened perialpine trough in the northern Middlelands of Switzerland. A total of 154.4 m of Quaternary sediments and 47.3 m of Tertiary Molasse bedrock has been cored from the deepest part of the lake, some 10 km south of the city of Zürich. Some 16.8 m of gravels and sands directly overlying the bedrock include basal till and probably earliest subglacial fluvial and lacustrine deposits. These are overlain by 98.6 m of fine-grained, glacial-aged sediments comprising completely deformed proglacial and/or subglacial lacustrine muds, separated by four basal mud tills. The lack of interglacial sediments, fossils, and other datable material, and the presence of severe sediment deformation and unknown amounts of erosion prevent the establishment of an exact chronostratigraphy for sediments older than the upper mud till. Above it some 8.6 m of lacustrine muds were deposited, folded, faulted, and tilted during the final opening of the lake at about 17,500–17,000 years ago. Superimposed are 30.4 m of final Würm and post-glacial sediments comprising (from oldest): cyclic proglacial mud, thick-bedded and laminated mud, a complex transition zone, laminated carbonate, laminated marl, and diatom-calcite varves. These sediments reflect changing catchment and lacustrine conditions including: glacial proximity, catchment stability, lake inflow characteristics, thermal structure, chemistry, and bed stability. Average sedimentation rates ranged from 11 cm yr−1 immediately after glacier withdrawal, to as low as 0.4 mm yr−1 as the environment stabilized. The lack of coarse outwash deposits separating the fine-grained glaciolacustrine sediments from a corresponding underlying basal till suggests that deglaciation of the deep northern basin of Lake Zürich was by stagnation-zone retreat rather than by retreat of an active ice-front.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02414864
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  • 10
    Electronic Resource
    Electronic Resource
    Genome-specific repetitive sequences in the genus Oryza (1989)
    Springer
    Theoretical and applied genetics 78 (1989), S. 201-209 
    Details
    ISSN: 1432-2242
    Keywords: Rice ; Repetitive sequences ; Oryza
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary Repetitive DNA sequences are useful molecular markers for studying plant genome evolution and species divergence. In this paper, we report the isolation and characterization of four genome-type specific repetitive DNA sequences in the genus Oryza. Sequences specific to the AA, CC, EE or FF genome types are described. These genome-type specific repetitive sequences will be useful in classifying unknown species of wild or domestic rice, and in studying genome evolution at the molecular level. Using an AA genome-specific repetitive DNA sequence (pOs48) as a hybridization probe, considerable differences in its copy number were found among different varieties of Asian-cultivated rice (O. sativa) and other related species within the AA genome type. Thus, the relationship among some of the members of AA genome type can be deduced based on the degree of DNA sequence similarity of this repetitive sequence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00288800
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