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  • 1990-1994  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Growth of YBa2Cu3O7−x thin films on Si with a CoSi2 buffer layer (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 419-421 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using the pulsed laser deposition technique, high-temperature superconducting YBa2Cu3O7−x (YBCO) films were grown on Si(001) with a 36 nm single-crystal 〈001〉 oriented CoSi2 buffer layer. The films, grown at a substrate temperature of ∼700 °C, have a metallic resistive temperature dependence with zero resistance at 85 K. X-ray diffraction, scanning electron microscopy, and ion channeling studies show that the YBCO films are polycrystalline but are strongly c-axis oriented normal to the Si substrate. Diffusion at the interface between the YBCO film and silicide buffer layer was minimized. This is essential to the growth of high-temperature superconducting films on Si substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104655
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Formation of metallic, crystalline NiSi2 thin film on amorphous SiO2/Si (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4107-4109 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin metallic, oriented crystalline NiSi2 films that are suitable for additional epitaxial growth have been formed on amorphous SiO2 layers on Si substrates. The orientation of the Si substrate is maintained in the NiSi2 film as if the SiO2 is not present. This was achieved by combining the separation by implantation of oxygen process and e-beam evaporation techniques. The results are comparable with NiSi2 films formed directly on Si. This technique should, in general, be applicable to other silicides that have been epitaxially grown on Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352843
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    High-quality Y1Ba2Cu3O7−x thin films on polycrystalline MgO by temperature-controlled chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1248-1250 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Y1Ba2Cu3O7−x superconducting thin films were grown in situ on polycrystalline MgO substrates by a chemical vapor deposition process that closely couples the sublimation temperatures of the elemental sources to that of the substrate during deposition. It was found that the best quality films were achieved with a controlled ramping of the substrate temperature from 850 °C, at the onset of deposition, down to 750 °C at the end of deposition. The films were analyzed by Rutherford backscattering (RBS), scanning electron microscopy (SEM), x-ray diffractometry (XRD), and four-point resistivity probe. The results of these studies showed that the films were highly c-axis oriented, had near-stoichiometric composition, and exhibited Tc,onset=90 K, Tco=85 K, and had a Jc=2×105 A/cm2 at 77 K in zero magnetic field. A model is proposed for the effect of such temperature control on the CVD growth mechanism of high-quality YBCO films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105517
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    a-axis oriented YBa2Cu3O7−x thin films on Si with CeO2 buffer layers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2043-2045 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown a-axis oriented YBa2Cu3O7−x (YBCO) thin films on Si(100) substrates with (110) oriented insulating buffer layers of cerium dioxide (CeO2) using the pulsed laser deposition technique. The films are highly oriented and textured as determined by θ–2θ x-ray diffraction, x-ray pole-figure scan, scanning electron microscopy, Rutherford backscattering spectroscopy, and ion channeling. No diffusion at the interface has been found at growth temperatures up to 760 °C, indicating the CeO2 is a chemically stable and structurally compatible intermediate material for the growth of YBCO on Si. A zero resistance superconducting transition temperature of 87 K and a critical-current density (Jc) of 1.5×105 A/cm2 at 75 K have been measured; Jc obtained represents the highest value for the a-axis oriented YBCO films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106126
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    Paper (German National Licenses)
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