In:
Journal of Applied Physics, AIP Publishing, Vol. 68, No. 7 ( 1990-10-01), p. 3191-3193
Abstract:
The distributions of implanted Fe ions into both amorphized quartz crystal (SiO2) and silicon at energies of 100, 150, and 200 keV were studied by the Rutherford backscattering technique. The obtained projected ranges and range stragglings are compared with our calculated values based on an angular diffusion model and transport of ions in matter predictions. Good agreement is obtained between calculated and experimental values for projected range and range straggling in both cases within experimental error.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1990
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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