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  • 11
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2190-2192 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A forward S-type bistability was observed in a Si diode with two double δ-doped Si tunnel junctions between the p and n contacts. The conductivity in the two branches of the bistable I–V curve changes by seven orders of magnitude. This, coupled with the all-silicon nature of the device, makes it a very attractive multistate device for practical applications. The bistability is explained by a mechanism, referred to as "band switching," which is supported by temperature dependence of the I–V characteristics. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1295-1297 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Writing of nanostructures on thin metal films using atomic force microscopy (AFM) was demonstrated. The writing experiments were done in a nitrogen ambient having variable humidity. Using a p-type heavily doped silicon AFM tip, a bias voltage was independently applied between the tip and the surface of a thin chromium layer deposited on a Si(100) substrate. Protruded patterns of various shapes were formed only on the water-adsorbed chromium surface when applying a negative bias on the tip. Their sizes were found to be dependent on the writing time, the bias voltage, and the humidity. The smallest feature size obtained is about 20 nm. From Auger electron spectroscopy (AES) analysis, the products are shown to be Cr oxides. The surface modification mechanism appears to be tip-induced local oxidation, i.e., anodization. © 1995 American Institute of Physics.
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  • 13
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2752-2754 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the ability to arrange self-organized Ge islands on patterned Si (001) substrates. Selective epitaxial growth of Si is carried out with gas-source molecular beam epitaxy to form Si mesas followed by subsequent Ge growth. Self-aligned and regularly spaced Ge islands are formed on the 〈110〉-oriented ridges of the Si stripe mesas. A mono-modal size distribution of the islands has been observed on the ridges. Using preferential nucleation sites allows us to place Ge islands at predetermined positions. The controlled arrangement of self-organized nanostructures offers the potential applications of island arrays for the implementation in nanoelectronics and quantum computation. © 1999 American Institute of Physics.
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  • 14
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1745-1747 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The inter-sub-level transitions in modulation-doped Ge quantum dots are observed. The dot structure is grown by molecular-beam epitaxy, and consists of 30 periods of Ge quantum dots sandwiched by two 6 nm boron-doped Si layers. An absorption peak in the midinfrared range is observed at room temperature by Fourier transform infrared spectroscopy, which is attributed to the transitions between the first two heavy-hole states of the Ge quantum dots. This study suggests the possible use of modulation-doped Ge quantum dots for improved infrared detector applications. © 1999 American Institute of Physics.
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3574-3575 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: © 1999 American Institute of Physics.
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1273-1275 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of morphology of InAs islands on Si grown through Stranski–Krastanow mode is investigated by atomic force microscopy. Formation of islands in the range of 15–50 nm is observed for depositions at various temperatures for the same monolayer coverage. Growth temperatures between 400 and 425 °C are found to yield dense ensembles of islands with uniform dimensional distributions. Found to exhibit long-term stability, these islands undergo morphological transformation when annealed at temperatures above 700 °C. Ostwald ripening occurs in these islands through an enhanced surface diffusion mechanism at high annealing temperatures. The results of annealing experiments indicate surface diffusion being the dominant mechanism responsible for morphological changes in these island structures rather than the heterointerface diffusion. © 1999 American Institute of Physics.
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  • 17
    Electronic Resource
    Electronic Resource
    Springer
    Pediatric surgery international 11 (1996), S. 490-492 
    ISSN: 1437-9813
    Keywords: Congenital lung disorders ; Cystic adenomatoid malformation ; Extralobar sequestration ; Newborn ; Therapy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract We present a rare case of coincidence of an extralobar sequestration with a congenital cystic adenomatoid malformation of the lung in a newborn. The symptoms, diagnostic features, and therapy are described and the etiology and classification are briefly discussed.
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  • 18
    Electronic Resource
    Electronic Resource
    Springer
    Pediatric surgery international 11 (1996), S. 456-461 
    ISSN: 1437-9813
    Keywords: Bladder augmentation ; Seromuscular ; Cell culture ; Urothelium ; Upside-down transplantation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract In search of alternatives for urothelial-lined augmentation or reconstruction of the urinary bladder, this study combined the application of seromuscular gastrointestinal (GI) segments with the use of in-vitro cultured, autologous urothelial cells in a sheep model. A cell culture system was set up for establishment and expansion of urothelial cells out of small biopsies from bladder mucosa. A biodegradable carrier made of lactidcaprolactoncopolymer was introduced, allowing upside-down transplantation of cell cultures in vivo. Bladder mucosal biopsies were taken from 14 sheep (mean weight 13.3 kg) with an average yield of 3.5×105 viable cells/cm2 after trypsinization. Primary low-density cultures grew to confluence within 5–7 days. Secondary cultures were established on the biodegradable film and were available a week later. They were transplanted onto demucosalized segments of stomach (group 1) or colon (group 2) in 5 animals each, followed by bladder incorporation in clam fashion. The earliest specimens, demonstrating survival and some proliferation of the cultured urothelium in both groups, were obtained 13 days postoperatively. To exclude urothelial regrowth, a temporary pouch grafted with cultured urothelium was created in 2 more sheep of each group. Biopsies were taken after 2 and 3 weeks, respectively, when the reopened pouch was integrated into the bladder (delayed augmentation). In these pouches, adherence and proliferation of urothelial cells could not be demonstrated. Limited radiologic and urodynamic investigations after 5–6-month follow-up revealed good shape, capacity, and compliance of the primarily augmented bladders only. The results indicate that urothelial cell cultures can be established and applied in vivo. Despite upside-down transplantation, they are able to survive on seromuscular segments in an autologous setting. The bladder environment is necessary to promote complete covering of the seromuscular segments. Based on our histologic findings, the share of both resident bladder urothelium and transplanted cells in the formation of the final urothelial lining remains uncertain. Morphologic and urodynamic follow-up data indicate that this process can be accelerated by the transplanted urothelial cells, reducing fibrotic changes of the GI segments. The functional quality of the augmented bladder seemed to improve compared to results after seromuscular augmentation alone.
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