In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 15, No. 6 ( 1997-11-01), p. 2495-2502
Abstract:
A picosecond excimer laser–plasma source has been constructed, which generates an x-ray average power of 2.2 and 1.4 W at the wavelengths required for proximity x-ray lithography: 1.4 nm (steel target) and 1 nm (copper target), respectively. The plasma source could be scaled to the 50–75 W x-ray average power required for industrial lithographic production by scaling the total average power of the commercial excimer laser system up to 1 kW. The 1 nm x-ray source is used to micromachine a 2.5 THz microwave waveguide–cavity package with a 48 μm deep, three-dimensional structure, using the LIGA technique. The 1 nm x-ray source is also used to print 180 nm long transistor gates in the fabrication process of field-effect transistors.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1997
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
Permalink