In:
Journal of Applied Physics, AIP Publishing, Vol. 100, No. 12 ( 2006-12-15)
Abstract:
We investigate the growth of CoPt-based nanostructures on thermally oxidized Si(100) substrates by ultrahigh-vacuum coevaporation at 50, 400, and 650°C substrate temperatures. The thermal evolution of the bimetallic deposits has been studied by x-ray photoelectron spectroscopy (XPS) as well as x-ray diffraction (XRD) in grazing incidence. This study reveals a fast migration of the deposited Co and Pt towards the SiO2 underlayer, which promotes silicide formation at substrate temperatures higher than 400°C. The XPS spectra of Pt and Co present shifts characteristic of the metal silicide, from 71to72.6eV and from 778to778.5eV, respectively. Moreover, structural investigations on the sample prepared at a substrate temperature of 650°C by symmetric XRD and by high resolution transmission electron microscopy reveal the growth of mixed CoPt silicide nanostructures via an endotaxial solid-state mechanism. It has been found that the extremely low deposition rate together with the high temperature during the deposition and the presence of SiO2 layer favor the disilicide formation, preserving the initial equiatomic CoPt ratio in the silicide islands.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2006
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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