In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 12B ( 1996-12-01), p. L1683-
Abstract:
An RF-sputtered SrTiO 3 (STO) capacitor was fabricated on a GaAs substrate. Microwave characterization exhibited a relative dielectric constant ( ε r ) of 200 up to 20 GHz. This high ε r was obtained when the base electrode and the STO film were sputter-deposited in succession. A novel Pt/Ti/Pt/Ti base metal exhibited high tolerance against ion-milling, resulting in lower Ohmic resistance compared to the conventional base metal, Pt/Ti.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.L1683
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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