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  • American Institute of Physics (AIP)  (16)
  • American Association for the Advancement of Science (AAAS)
  • IODP
  • 1995-1999  (16)
Document type
Publisher
  • American Institute of Physics (AIP)  (16)
  • American Association for the Advancement of Science (AAAS)
  • IODP
  • Springer  (2)
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Dependence of damage and strain on the temperature of Si irradiation in epitaxial Ge0.10Si0.90 films on Si(100) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2329-2338 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Damage and strain produced in a 370-nm-thick strained epitaxial Ge0.10Si0.90 film on Si(100) by irradiation with 320 keV 28Si+ ions at fixed temperatures ranging from 40 to 150 °C and for doses from 1 to 30×1014/cm2 have been measured by MeV 4He channeling spectrometry, transmission electron microscopy, and high-resolution x-ray diffractometry. The ion energy was chosen so that the maximum damage created by irradiation occurs very near the GeSi-Si interface. For all temperatures, the retained damage and the perpendicular strain induced by the irradiation are significantly greater in the GeSi epilayer than in the Si substrate. For all doses the retained damage and the induced perpendicular strain become small above 100 °C. Both rise nonlinearly with increasing ion dose. They are related to each other differently in GeSi than in bulk Si or Ge irradiated at room temperature. Postirradiation furnace annealing can remove a large portion of the induced damage and strain for nonamorphized samples. Amorphized samples regrow by solid-phase epitaxy after annealing at 550 °C for 30 min; the regrown GeSi is, however, highly defective and elastically relaxed. A consequence of this defectiveness is that irradiation-induced amorphization in metastable GeSi is undesirable for applications where good crystalline quality is required. Ion implantation above room temperature can prevent amorphization. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358755
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  • 2
    Electronic Resource
    Electronic Resource
    Raman scattering from a self-organized Ge dot superlattice (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1863-1865 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a Raman scattering study of a self-organized Ge dot superlattice. The structure, which consists of 20 periods of Ge quantum dots sandwiched by 6 nm Si spacers, is grown on a Si (100) substrate by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy is used to characterize the structural properties of these Ge dots. Raman spectrum shows a downward shift of the Ge–Ge mode, which is attributed to the phonon confinement in the Ge dots. From polarization dependent Raman spectra, strong inter-sub-level transition in the Ge quantum dots is observed. From a simple calculation, the observed peak at 1890 cm−1 in the polarized spectrum is attributed to the transition between the first two heavy hole states of the Ge quantum dots. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123694
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependence of Fermi level obtained by electroreflectance spectroscopy of undoped n+-type doped GaAs (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3889-3891 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroreflectance (ER) spectra of an undoped n+-type doped GaAs have been measured over a range of temperature from 25 to 400 K. Many Franz–Keldysh oscillations were observed above the band-gap energy, which enabled the electric field strength and, hence, also the Fermi level to be determined. The photovoltaic effect is shown to be negligible, even at the low temperature. The experiment shows that the Fermi level decreases with increasing temperature and has almost the same temperature dependence as the energy gap. It is pinned at about 0.63 of energy gap below the conduction band. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120535
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  • 4
    Electronic Resource
    Electronic Resource
    GeSi/Si bistable diode exhibiting a large on/off conductance ratio (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2403-2405 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel bistable phenomenon having both a high conductance on state and a high impedance off state has been observed in a forward biased delta-doped GeSi/Si tunnel diode grown by molecular beam epitaxy. The bistable characteristics are attributed to the different mobile carrier densities in the delta-doped layers, which leads to the switching of the band structure from a tunnel junctionlike alignment to a p-i-n junctionlike alignment or vice-versa. An on/off conductance ratio larger than 106 has been demonstrated for a modified diode structure. The device processing is technologically compatible to the current Si metal-oxide-semiconductor technology, making the device useful for a high speed, high density static random access memory cell. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113954
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  • 5
    Electronic Resource
    Electronic Resource
    Interfacial roughness scaling and strain in lattice mismatched Si0.4Ge0.6 thin films on Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 629-631 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial roughness parameters and lattice strain of Si0.4Ge0.6 films with varying thickness epitaxially grown on Si(100) were determined using the techniques of grazing-incidence x-ray scattering and diffraction. The roughness of both the buried interface and sample surface follows a similar power-law scaling behavior with an exponent β around 0.71 for films below the critical thickness, and it undergoes a large change above the critical thickness. Observation of such a scaling law thus establishes a quantitative correlation between the interfacial roughness and lattice strain, and also allows the prediction of interfacial roughness as a function of film thickness of this compound. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115411
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  • 6
    Electronic Resource
    Electronic Resource
    Normal-incidence strained-layer superlattice Ge0.5Si0.5/Si photodiodes near 1.3 μm (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 566-568 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge0.5Si0.5 strained-layer pin photodiodes, in which multiple strained layers serve as the absorption region, have been fabricated. These devices exhibit an optical response at wavelengths beyond 1.3 μm at normal incidence. The measured external quantum efficiencies at an applied bias of 4 V are 17% at 0.85 μm and 1% at 1.3 μm, respectively. Excellent electrical characteristics evidenced by the avalanche breakdown at 20 V have also been demonstrated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115171
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  • 7
    Electronic Resource
    Electronic Resource
    Intersubband absorption in boron-doped multiple Ge quantum dots (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 185-187 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intersubband absorption in self-assembled boron-doped multiple Ge quantum dots is observed. The structures used consist of 20 periods of boron-doped Ge dot layers and undoped Si barriers. The infrared absorption as a function of wavelength is measured by Fourier transform infrared spectroscopy using a waveguide geometry. Absorption peaks in the mid-infrared range have been observed, which are attributed to the transitions between the first two heavy hole states of the Ge quantum dots. The polarization dependence measurement is used to study the nature of the transitions. This observation suggests the possible use of multiple Ge quantum dots for infrared detector application. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123287
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2064-2066 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examined low-frequency noise in doped and undoped channel GaN/AlGaN/SiC heterostructure field-effect transistors with different Al content in the barrier. The observed noise spectra follow the 1/fγ law with 0.8≤γ≤1.2 for frequencies f up to 100 kHz. Our results indicate two orders of magnitude reduction in the input-referred noise spectral density in the undoped channel devices with respect to the noise density in the doped channel devices of comparable electric characteristics. Low temperature measurements reveal generation—recombination-type peaks in the spectra of the doped channel devices. Effects of the piezoelectric charges at the GaN/AlGaN interface are also discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124917
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  • 9
    Electronic Resource
    Electronic Resource
    SiGe quantum dots prepared on an ordered mesoporous silica coated Si substrate (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2448-2450 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports a new way of preparing wafer sized SiGe quantum dots on an ordered mesoporous sol gel silica coated Si. It was found from x-ray diffraction that very good regular layers of mesoscopic sized SiGe quantum dots can be formed in the silica. Initial low temperature photoluminescence measurements show much improved light emission of the buried dots. This technique is a potential low cost method for producing quantum dot arrays. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120085
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  • 10
    Electronic Resource
    Electronic Resource
    Growth and study of self-organized Ge quantum wires on Si(111) substrates (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2471-2473 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-organized Ge quantum wires were grown on regular atomic steps formed along [1¯10] direction on Si(111) substrates by annealing at 870 °C in vacuum. The samples were then studied by atomic force microscopy, polarization-dependent Raman scattering, and low temperature photoluminescence spectroscopy. The results suggest that good quality Ge quantum wires were formed and clear quantum confinement-induced quantization in the wires was observed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123884
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