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  • 1
    Electronic Resource
    Electronic Resource
    Light-emission properties in nanocrystalline BaTiO3 (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2807-2809 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports photoluminescence properties of nanocrystalline BaTiO3. Two intense emission bands centered at 543 and 694 nm and a weak one at 574 nm have been observed at room temperature. The change of luminescence peak with different heat treatments correlates to the evolution of Ti4+ defects in the nanocrystalline BaTiO3 matrice. The light-emission mechanism is explained within the framework of self-trapped excitons by combining quantum-size confinement and dielectric confinement effects. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1322376
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  • 2
    Electronic Resource
    Electronic Resource
    Infrared optical properties of Ba0.8Sr0.2TiO3 ferroelectric thin films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3651-3653 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared optical properties of barium strontium titanate Ba0.8Sr0.2TiO3 thin films grown on Pt/Ti/SiO2/Si substrates are studied by infrared spectroscopic ellipsometry (IRSE) in the spectral range of 2.5–12.6 μm. The refractive index and extinction coefficient of Ba0.8Sr0.2TiO3 are determined by fitting the IRSE data using a classical dielectric function formula. As the wavelength increases, the refractive index decreases, but on the contrary, the extinction coefficient increases. The absorption coefficient is greater than 1000 cm−1 for the wavelength over 12.1 μm, but very small and less than 100 cm−1 under 5.3 μm. The effective static ionic charge has also been derived, which is smaller than it would be in a purely ionic material for Ba0.8Sr0.2TiO3 thin films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330224
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  • 3
    Electronic Resource
    Electronic Resource
    Observation of terahertz electric pulses generated by nearly filled-gap nonuniform illumination excitation (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3896-3898 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Terahertz (THz) electric pulses generated by nonuniform illumination excitation in a nearly filled-gap configuration were observed. In this scheme, the excitation beam is focused to a spotsize only slightly smaller than the spacing between the transmission lines and is located symmetrically within the gap. With 100 fs laser pulses excitation on sliding-contact photoconductive switches fabricated on low-temperature-grown GaAs, electric pulse correlation with 190±20 fs full width at half maximum, which corresponds to a 3 dB bandwidth of 1.1 THz, was observed. Moreover, electric pulses with three times larger peak amplitude than those generated with filled-gap illumination from In coplanar striplines were observed. Bias, wavelength, and pump power dependencies were investigated. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1332830
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  • 4
    Electronic Resource
    Electronic Resource
    Ferredoxin reductase affects p53-dependent, 5-fluorouracil–induced apoptosis in colorectal cancer cells (2001)
    [s.l.] : Nature Publishing Group
    Nature medicine 7 (2001), S. 1111-1117 
    Details
    ISSN: 1546-170X
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Medicine
    Notes: [Auszug] Loss of p53 gene function, which occurs in most colon cancer cells, has been shown to abolish the apoptotic response to 5-fluorouracil (5-FU). To identify genes downstream of p53 that might mediate these effects, we assessed global patterns of gene expression following 5-FU treatment of isogenic ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nm1001-1111
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  • 5
    Electronic Resource
    Electronic Resource
    Comparison of optical pump-probe characterization of low-temperature-grown GaAs at well-above-bandgap and near-bandedge wavelengths (2000)
    Springer
    Optical and quantum electronics 32 (2000), S. 573-584 
    Details
    ISSN: 1572-817X
    Keywords: low-temperature-grown GaAs ; photo-carrier lifetime ; time-resolved photoreflectance
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Annealed low-temperature-grown GaAs was studied by time-resolved photoreflectance measurement at well-above-bandgap photon energies and by photoreflectance as well as transmission measurements at near-bandedge wavelength. At near-bandedge wavelength, the initial changes in reflectivity and transmission were observed to relax at identical relaxation rate, which was attributed to the absence of carrier cooling and the domination of carrier trapping. All the measured photoreflectance traces were found to be well fitted by the previously proposed three-component decomposition procedure. Among the three components, the fast positive peak was attributed to absorption bleaching and its relaxation, that is, the scattering of the photo-carrier out of their initially excited states by carrier cooling and trapping. The decay times of the positive peak, combined with the carrier cooling times extracted from photoreflectance measurement on semi-insulating GaAs, give consistent estimate of carrier trapping time at all wavelengths within the spectral range. Our results verify that well-above-bandgap photoreflectance measurement combined with the three-component fitting procedure can be used to estimate the photo-carrier trapping time which are consistent with that obtained by near-bandedge photoreflectance and transmission techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1007008003089
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  • 6
    Electronic Resource
    Electronic Resource
    Decolourisation of Acid Violet 7 with complex pellets of white rot fungus and activated carbon (2000)
    Springer
    Bioprocess engineering 23 (2000), S. 295-301 
    Details
    ISSN: 0178-515X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract  Complex mycelium pellets of a white rot fungus, Trametes versicolor, with activated carbon powder were prepared and investigated for decolourisation of an azo dye, Acid Violet 7. The pellets had a black core of activated carbon powder that was surrounded by a layer of white fungal mycelium. Compared to the activated carbon powder, the mycelium pellets (activated carbon free), and the mycelium pellets plus the activated carbon powder that was added into a dye solution, the complex pellets showed the highest and the most stable activity of dye decolourisation in batch cultures. The high decolourisation rate of the complex pellets was attributed not only to dye adsorption by the activated carbon in the complex pellets, but also to adsorption of extracellular enzymes and other reagents involved in dye decolourisation as well as the closeness between the dye molecules and the fungal cells. The complex pellets were further evaluated in a fluidized-bed reactor in two operation modes: a continuous flow feeding and a repeated-batch feeding. The latter gave higher and more stable decolourisation efficiency than the former. Production of laccase in flask culture and the fluidized-bed bioreactor was also compared.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004499900162
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