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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5929-5935 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This study investigates the effects of CrAl underlayer and intermediate layer on the magnetic properties, crystallographic texture, and thermal stability of CoCrPtTa thin film media. Enhancement of coercivity and thermal stability factor of CoCrPtTa/CrAlx thin film media were observed when the Al concentration in the CrAl underlayer was varied from 0 to 14 at. %. We also observed an improvement in the in-plane crystallographic texture and a reduction in the magnetic switching volume and intergrain interaction. Results from the interdiffusion study using Auger depth profiling analysis, and ΔM measurement showed that the decrease of switching volume and intergrain interaction may be attributed to Al diffusion and/or Al-enhanced Cr diffusion into the grain boundary of the magnetic layer. Compared to CoCrPtTa/Cr media, we found that high coercivity, good in-plane crystallographic texture, and magnetic isolation for CoCrPtTa/CrAl media could be achieved at lower substrate temperature. This study has also shown that a CrAl intermediate layer could be used to further enhance the magnetic, crystallographic texture, and thermal stability properties of the CoCrPtTa thin film media. © 2002 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4489-4493 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of ZnO quantum dots (QDs) capped with polyvinyl pyrrolidone (PVP) molecules have been investigated. It is demonstrated that surface modification by PVP can dramatically change the emission spectra of the ZnO QDs. At the optimized condition with a PVP/Zn2+ ratio of 3:5, the photoluminescence (PL) spectrum of ZnO QDs shows a strong ultraviolet (UV) emission while the low energy green emission is fully quenched. This is a result of the surface passivation of the ZnO QDs by the PVP molecules. The origin of the green emission is attributed to the surface states associated with oxygen vacancies. Temperature and excitation power dependent PL studies suggest that the UV emission is associated with localized states. © 2001 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3442-3449 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of thermal energy (kBT), which has been found to play some important roles in the magnetic properties of recently developed antiferromagnetically coupled media, is described. It was observed that the thermal energy helps to obtain an antiparallel configuration of moments at remanence. Therefore, a reduction in the remnant moment–thickness product (Mrδ) is observed, even for smaller values of J (interface coupling constant) than those used in simulations that do not consider thermal energy. The magnetic viscosity measurement helps to distinguish the magnetization decay behavior of the top and bottom layers. The magnetic moments of top and bottom layers show maximum decay at different fields and the decay rates approximately scale with their thickness. Viscosity results also point out that the magnetization reversal of the bottom layer should occur in the first quadrant, in order to obtain a low noise and thermally stable media. Micromagnetic simulation was performed by including thermal effects. In that case, Mrδ reduction could be obtained for smaller values of J than in the case where thermal energy is not included in the simulation. © 2001 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2165-2171 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of RFe12−xNbx and R(Fe1−yCoy)11.3Nb0.7 compounds with R=Y, Tb, and Dy have been investigated in the concentration region defined by 0.6〈x〈0.8 and y≤0.3, where the compounds are single phase with the ThMn12-type of structure. The Curie temperature TC of the RFe12−xNbx compounds is almost independent of the Nb content whereas the saturation magnetization Ms decreases with increasing Nb content. The spin-reorientation temperature Tsr of the TbFe12−xNbx and DyFe12−xNbx compounds decreases monotonically with increasing x. Substitution of Co for Fe in RFe11.3Nb0.7 leads to a remarkable increase of TC and the appearance of a maximum in the Co-concentration dependence of Ms. In contrast, Tsr decreases monotonically with increasing Co content for both R=Tb and Dy. The modification of T- and R-sublattice anisotropy originating from a change of the Nb content and from substitution of Co for Fe was analyzed by combining crystalline electric field theory and the individual-site model. © 2002 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1266-1270 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two sensitive polarized spectroscopies, reflectance difference spectroscopy and photocurrent difference spectroscopy, are used to study the characteristic of the in-plane optical anisotropy in the symmetric and the asymmetric (001) GaAs/Al(Ga)As superlattices (SLs). The anisotropy spectra of the symmetric and the asymmetric SLs show significant difference: for symmetric ones, the anisotropies of the 1HH→1E transition (1H1E) and 1L1E are dominant, and they are always approximately equal and opposite; while for asymmetric ones, the anisotropy of 1H1E is much less than that of 1L1E and 2H1E, and the anisotropy of 3H2E is very strong. The calculated anisotropy spectra within the envelope function model agree with the experimental results, and a perturbation approach is used to understand the role of the electric field and the interface potential in the anisotropy. © 2001 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8074-8079 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well (MQW) diodes, with the MQW layer grown at different temperatures by molecular beam epitaxy, have been investigated. Temperature-dependent current–voltage studies reveal a trap-filled limit current at a low temperature and a generation-recombination current via deep levels at high temperature for a 300 °C-grown sample. Frequency-dependent capacitance and deep-level transient spectroscopy reveal one majority trap at 0.73 eV and two minority traps at 0.71 and 0.43 eV. The 0.73 eV trap is also detected in 550 °C-grown samples, suggesting that it is a common defect in relaxed InGaAs/GaAs MQWs and probably originates from the defect states related to the strain relaxation. The 0.71 eV trap is believed to be the dominating deep level that governs the current conduction due to the activation energy observed in the current–voltage characteristics. © 2000 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1251-1254 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The onset of strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures is investigated. X-ray diffraction shows that when the InGaAs thickness increases beyond its critical thickness, another peak on the right shoulder of the GaAs peak appears, indicating that the top GaAs layer is being compressed in the growth direction by the relaxation of the InGaAs layer. Energy shifts of 44 and 49 meV are observed, respectively, from the strains of the InGaAs and GaAs top layers when increasing the InGaAs thickness from 300 and 1000 Å. These energy shifts are in agreement with theory calculated based on the relaxation process observed in x-ray diffraction, providing evidence that the relaxation occurs from near the bottom InGaAs/GaAs interface while the top interface still remains strained. This result is further corroborated by the images of cross-sectional transmission electron micrographs which show that most of the misfit dislocations are confined near the bottom interface. © 2000 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6015-6020 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline nickel ferrite (NiFe2O4) particles were successfully synthesized in situ in an amorphous silica matrix by mechanical activation at room temperature. Phase development in the amorphous precursors, derived via a modified sol–gel synthesis route, with increasing mechanical activation time was studied in detail by employing transmission electron microscopy, x-ray diffraction, and Raman spectroscopy. NiFe2O4 nanoparticles of 8.05 nm in mean particle size with a standard deviation of 1.24 nm, which were well dispersed in the silica matrix, were realized by 30 h of mechanical activation. The phase formation of nanocrystalline NiFe2O4 particles involves the nucleation of Fe3O4 in amorphous silica at the initial stage of mechanical activation, followed by the growth of nickel ferrite by incorporation of Ni2+ caions into Fe3O4. Their magnetic anisotropy, surface spin disorder, and cation distribution are investigated by considering both the strain imposed by silica matrix and the buffer effect during mechanical activation. © 2002 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6994-6996 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: On the basis of a micromagnetic model, magnetization reversal in two antiferromagnetically coupled ferromagnetic layers (10 nm t1/0.9 nmM/t2 nm films with t2=2, 3, 4, 5 nm, here t1 and t2 are the top and bottom layers, respectively, and M the spacer) with the same random anisotropy arrangement can be represented by a computer simulation. The calculation indicates that the appearance of a full antiferromagnetic coupling at remanence requires the antiferromagnetic coupling constant j=−3.5 erg/cm2 for the 10 nm t1/0.9 nmM/3 nm t2, films and it needs a large j value if t2 increases for the case of Ku2=Ku1=1×106 erg/cm3 and Ms1=Ms2=400 emu/cm3. Hc follows the equation Hc=−0.755j/Mst1 (j〈0). Why the calculated Hc values deviate from Hcmax=−j/Mst1 is discussed. © 2001 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1369-1373 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An increase in leakage current accompanied by a drastic carrier depletion is found for InGaAs/GaAs Schottky diodes when the InGaAs thickness is larger than its critical thickness. Due to drastic carrier depletion, free-carrier concentration around the InGaAs region for relaxed samples cannot be obtained from capacitance–voltage data but from resistance–capacitance time constant effect observed in capacitance–frequency measurement. A trap at 0.33 to 0.49 eV is observed for relaxed samples by deep-level transient spectroscopy. The resistance caused by carrier depletion has an activation energy close to that of the trap, supporting that the carrier depletion is caused by capture from the trap. © 2000 American Institute of Physics.
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