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  • 2000-2004  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4186-4188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a (311)B InP substrate. Transmission electron microscopy clearly shows that a high density of smaller InAs islands can be obtained by using such a high index substrate. After introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs are much more uniform in size and form two-dimensional well ordered arrays. The photoluminescence (PL) spectra also confirm that the InAs QDs grown on underlying In0.52Al0.24Ga0.24As have a better quality than those grown in the In0.52Al0.48As matrix. A simple calculation indicates that the redshift of the PL peak energy mainly results from InAs QDs on underlying In0.52Al0.24Ga0.24As of large size. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350616
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2048-2050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of growth temperature on the optical properties of self-assembled In0.65Al0.35As/Al0.35Ga0.65As quantum dots is studied using photoluminescence and electroluminescence spectra. With the growth temperature increasing from 530 to 560 °C, the improvement of optical and structural quality has been observed. Furthermore, edge-emitting laser diodes with three stacked InAlAs quantum dot layers grown at different temperature are processed, respectively. For samples with quantum dots grown at 560 °C, the continuous wave operation is obtained up to 220 K, which is much higher than that of ones with InAlAs islands grown at 530 °C and that of the short-wavelength quantum-dot laser previously reported. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388021
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5433-5436 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The size and shape evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0 ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9 ML deposition on GaAs(100) substrate. Based on comparisons with the formation of large incoherent InAs islands on single-layer samples at late growth stage, the larger coherent InAs quantum dots at 2.9 ML deposition has been observed on the second InAs layer. A simple model analysis accounting for the surface strain distribution influenced by buried islands gives a stronger increment of critical QD diameter for dislocation nucleation on the second layer in comparison with the single-layer samples. Additionally, the inhibition of dislocation nucleation in InGaAs/GaAs large islands can also be explained by our theoretical results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318371
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  • 4
    Electronic Resource
    Electronic Resource
    Anomalous temperature dependence of photoluminescence from InAs quantum dots (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2529-2532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled InAs quantum dots are fabricated on a GaAs substrate by molecular beam epitaxy. The dots are covered by several monolayers of In0.2Ga0.8As before a GaAs cap layer and an in situ postgrowth annealing is performed to tune the emission to higher energy. The temperature dependence of photoluminescence from this structure demonstrates a slower redshift rate of the peak position, a gradual broadening of the linewidth and an abnormal enhancement of integrated intensity as the temperature is increased from 15 to 300 K. These phenomena are closely related to the introduction of an InGaAs layer and to the intermixing of In and Ga atoms during annealing. We propose a model to explain the unusual increase in PL intensity, which fits the experimental data well. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288231
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  • 5
    Electronic Resource
    Electronic Resource
    Self-organized type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots realized on GaAs(311)A (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3741-3743 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-organized In0.55Al0.45As/Al0.50Ga0.50As quantum dots are grown by the Stranski–Krastanow growth mode using molecular beam epitaxy on the GaAs(311)A substrate. The optical properties of type-II InAlAs/AlGaAs quantum dots have been demonstrated by the excitation power and temperature dependence of photoluminescence spectra. A simple model accounting for the size-dependent band gap of quantum dots is given to qualitatively understand the formation of type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots driven by the quantum-confinement-induced Γ→X transition. The results provide new insights into the band structure of InAlAs/AlGaAs quantum dots. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126768
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