Note: Front Cover -- Gallium Nitride (GaN) II -- Copyright Page -- Contents -- Preface -- List of Contributors -- CHAPTER 1. Hydride Vapor Phase Epitaxial Growth of III-V Nitrides -- List of Acronyms and Abbreviations -- I. Introduction -- II. Nitride HVPE Growth -- III. GaN Film Characterization -- IV. Light-Emitting Diodes -- V. HVPE for Nitride Substrates -- VI. Conclusions -- References -- CHAPTER 2. Growth of III-V Nitrides by Molecular Beam Epitaxy -- I . Introduction -- II. Background of Molecular Beam Epitaxy Techniques -- III. Nitrogen Sources Used for the Growth of III-V Nitrides by Molecular Beam Epitaxy -- IV. GaN Films -- V. InGaAlN Alloys -- VI. Multiquantum Wells -- VII. Device Applications -- VIII. Conclusions -- References -- CHAPTER 3. Defects in Bulk GaN and Homoepitaxial Layers -- I. Introduction -- II. Polarity of the Crystals -- III. Defect Distribution -- IV. Nanotubes -- V. PL and Point Defects -- VI. Influence of Annealing -- VII. Larger-Dimension Bulk GaN Crystals -- VIII. Homoepitaxial Layers -- IX. Summary -- References -- CHAPTER 4. Hydrogen in III-V Nitrides -- I. Introduction -- II. Theoretical Framework -- III. Experimental Observations -- IV. Conclusions and Outlook -- References -- CHAPTER 5. Characterization of Dopants and Deep Level Defects in Gallium Nitride -- I. Introduction -- II. Materials Preparation -- III. Shallow Dopants -- IV. Deep Level Defects -- V. Conclusions -- References -- CHAPTER 6. Stress Effects on Optical Properties -- I. Introduction -- II. The Crystalline Structures of III-Nitrides -- III. Effects of Strain Fields on the Electronic Structure of Wurtzite III Nitrides -- IV. Exciton Oscillator Strengths and Longitudinal-Transverse Splittings -- V. Origin of the Strain -- VI. Phonons Under Strain Fields -- VII. Shallow vs Deep-Level Behavior Under Hydrostatic Pressure. , VIII. Influence of Strain Fields on Optical Properties of GaN-AlGaN Quantum Wells -- IX. Self-Organized Quantum Boxes -- X. Conclusion -- References -- CHAPTER 7. Strain in GaN Thin Films and Heterostructures -- I. Thin-Film Growth at Low Temperatures -- II. Stress/Strain Relations -- III. Control of Hydrostatic and Biaxial Stress and Strain Components -- IV. Strained AlN/InN/GaN Heterostructures -- V. Perspectives -- References -- CHAPTER 8. Nonlinear Optical Properties of Gallium Nitride -- I. Introduction -- II. Background -- III. Second-Order Nonlinear Optical Phenomena -- IV. Third-Order Nonlinear Optical Phenomena -- V. Potential Devices -- VI. Conclusions -- References -- CHAPTER 9. Magnetic Resonance Investigations on Group III-Nitrides -- I. Introduction -- II. Magnetic Resonance-The Basis of Identification -- III. Shallow Donors in Cubic and Hexagonal GaN (EPR Results) -- IV. Shallow and Deep Donors in GaN (ODMR Results) -- V. Shallow and Deep Acceptors in GaN -- VI. Defects Induced by Particle Irradiation in GaN and AIN -- VII. Device-Related Magnetic Resonance Studies -- VIII. Transition Metal Impurities -- IX. Outlook -- References -- Chapter 10. GaN and AIGaN Utraviolet Detectors -- I. Introduction -- II. Principle of Operation -- III. Detectiviy and Noise Equivalent Power (NEP) -- IV. GaN Photodetector Fabrication -- V. GaN-Based Photoconductive Detectors -- VI. GaN-Based Photovoltaic Detectors -- VII. Optoelectronic A1GaN/GaN Field Effect Transistors -- VIII. Conclusions and Future Challenges -- References -- CHAPTER 11. III-V Nitride-Based X-ray Detectors -- I. Introduction -- II. Materials Requirements and Current Status -- III. The Photoconductivity Response of Nitrides -- IV. Effects of Irradiation on GaN -- V. X-ray Response of Prototype Diodes -- VI. Summary and Future Work -- References -- Index. , Contents of Volumes in This Series.

Note: Front Cover -- Electroluminescence I -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Visible Light-Emitting Diodes -- I. Historical Overview -- II. LED Basics -- III. LED Technology -- IV. LED Performance and Related Technologies -- V. Applications of Visible LEDs -- VI. Future Trends -- References -- Chapter 2. High-Efficiency AlGaInP Light-Emitting Diodes -- I. Introduction -- II. AlGaInP Material Properties -- III. AlGaInP LED Device Design -- IV. Epitaxial Growth -- V. Device Fabrication and Packaging -- VI. AlGaInP Device Performance -- VII. Conclusions -- References -- Chapter 3. High-Brightness Nitride-Based Visible-Light-Emitting Diodes -- I. Introduction -- II. III-V Nitride Crystal Growth -- III. Electronic Properties and Characterization of III-V Nitride Films -- IV. Nitride LED Device Structures and Performance -- V. Summary and Conclusions -- References -- Chapter 4. Organic LED System Considerations -- I. Introduction -- II. Reliability Issues for Practical Application -- III. Driving Scheme -- IV. OLED Panels -- V. Summary -- References -- Chapter 5. Molecular Organic Light-Emitting Devices -- I. Overview -- II. Theory of Operation of Organic Light-Emitting Devices -- III. Improved Operation of Organic Light-Emitting Devices -- IV. Color-Tunable OLEDs in Full-Color Displays -- V. SUMMARY -- References -- Index -- Contents of Volumes in This Series.

Note: Front Cover -- Chemical Mechanical Polishing in Silicon Processing -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Introduction -- I. CMP: A Unique and Evolving Semiconductor Fabrication Technology-Past, Present, and Future -- Chapter 2. Equipment -- I. Introduction -- II. CMP Equipment Design Evolution -- III. Carriers -- IV. Platens -- V. Pad Conditioning -- VI. CMP Equipment Integration -- VII. Copper Polishing and CMP Tool Requirements -- VIII. 300-mm CMP Tools -- IX. Conclusion -- References -- Chapter 3. Facilitization -- I. Introduction -- II. Outline -- III. Slurry Distribution System Overview -- IV. Slurry Handling -- V. Slurry Distribution Systems -- VI. Slurry Dispense Engines -- VII. Slurry Blending Technology -- VIII. Slurry Measuring Techniques -- IX. Daytank Replenishment -- X. Mix Order -- XI. Piping Systems -- XII. Piping System Variations -- XIII. Materials of Construction -- XIV. Slurry Settling -- XV. Slurry Room Location -- XVI. Pressure and Flow Consistency -- XVII. Back-Pressure Devices -- XVIII. Slurry Consumption Ramp -- XIX. System Redundancy -- XX. Valve Boxes -- XXI. Storage Tanks -- XXII. Agitation -- XXIII. Metrology -- XXIV. Filtration -- XXV. Slurry System Maintenance -- XXVI. Waste Disposal -- References -- Chapter 4. Modeling and Simulation -- I. Introduction -- II. Wafer-Scale Models -- III. Patterned Wafer CMP Modeling -- IV. Die-Level Modeling of Ild CMP -- V. Models for Metal Polishing -- VI. Summary and Status -- References -- Chapter 5. Consumables I: Slurry -- I. Introduction -- II. Abrasives -- III. Slurry Solution -- IV. Comparisons Among Slurries -- References -- Chapter 6. CMP Consumablesii: Pad -- I. Introduction -- II. Classes of Pads and Their Manufacture -- III. Structure, Properties, and Their Relationship to the Polishing Process. , IV. Application to Semiconductor Processing -- References -- Chapter 7. Post-CMP Clean -- I. Introduction -- II. Surface Configurations after CMP Processes -- III. Cleaning Requirements after CMP Processes -- IV. Corrosion Effects -- V. Slurry Removal -- VI. Metallic Contamination Removal -- VII. Damaged Layer Removal -- VIII. Final Passivation -- IX. Examples of Practical Post-CMP Cleaning Processes -- X. Conclusion -- References -- Chapter 8. CMP Metrology -- I. Introduction -- II. Reflectometry -- III. Defectivity Monitoring -- IV. Noncontact Capacitive Measurement -- V. Total X-Ray Fluorescence -- VI. Stylus Profilometry (Force Measurement) -- VII. Atomic Force Microscopy -- VIII. Four-Point Probe -- References -- Chapter 9. Applications and CMP-Related Process Problems -- I. Introduction -- II. Oxide CMP Within-Wafer Nonuniformity (WIWNU) -- III. Post-CMP Oxide Thickness Control -- IV. Defectivity -- V. Tungsten CMP Problems -- VI. Other Problems -- References -- Index -- Contents of Volumes in This Series.

Note: Front Cover -- High Pressure in Semiconductor Physics II -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Parallel Transport in Low-Dimensional Semiconductor Structures -- I. Introduction -- II. The Effect of Pressure -- III. Integer Quantum Hall Effect -- IV. Fractional Quantum Hall Effect -- V. Magnetophonon Resonance Effect Under Hydrostatic Pressure in GaAs/Al0.28Ga0.72As, Ga0 47 In0.53As/Al0.48In0.48In0.52, and in Ga0.47In0.53As/InP Heterojunctions -- Acknowledgments -- References -- Chapter 2. Tunneling Under Pressure: High-Pressure Studies of Vertical Transport in Semiconductor Heterostructures -- I. Introduction -- II. Theory and Calculation -- III. Experimental Techniques -- IV. High Pressure Studies of Negative Differential Resistance -- V. Concluding Remarks -- Acknowledgments -- References -- Chapter 3. Phonons, Strains, and Pressure in Semiconductors -- I. Introduction -- II. Background -- III. Effects of Hydrostatic Pressure on Optical Phonons -- IV. Effects of Strains on Optical Phonons -- V. Strain Characterization of Heterojunctions and Superlattices -- VI. Concluding Remarks -- Acknowledgments -- Appendix -- References -- Chapter 4. Effects of External Uniaxial Stress on the Optical Properties of Semiconductors and Semiconductor Microstructures -- I. Introduction -- II. Effects of Homogeneous Deformation on Electronic Energy Levels -- III. Determination of Intervalley Electron-Phonon and Hole-Phonon Interactions in Indirect Gap Semiconductors -- IV. Piezo-Optical Response of Ge and GaAs in the Opaque Region -- V. Intrinsic Piezobirefringence in the Transparent Region -- VI. Effects of External Stress on Quantum States -- V. Summary -- VI. Acknowledgments -- References -- Chapter 5. Semiconductor Optoelectronic Devices -- I. Introduction -- II. Experimental Considerations -- III. Semiconductor Lasers. , IV. Uniaxial Strain Effects: Strained-Layer Lasers -- V. Hydrostatic Pressure Measurements of Avalanche Photodiodes: The Band-Structure Dependence of Impact Ionization -- VI. Summary -- Acknowledgments -- References -- Chapter 6. The Application of High Nitrogen Pressure in the Physics and Technology of III-N Compounds -- I. Introduction -- II. Thermal Stability of AIN, GaN, and InN -- III. Solubility of N in Liquid Al, Ga, and In -- IV. Kinetic Limitations of Dissolution of Nitrogen in Liquid Al, Ga, and In -- V. High N2 Pressure Solution Growth of GaN -- VI. Physical Properties of Pressure-Grown GaN Crystals -- VII. Wet Etching and Surface Preparation -- VIII. Homoepitaxy -- IX. Conclusions -- Acknowledgments -- References -- Chapter 7. Diamond Anvil Cells in High Pressure Studies of Semiconductors -- I. DAC: An Apparatus Par Excellence to Achieve Highest Static Pressure -- II. Condensed Matter Physics Techniques Coupled to a DAC -- III. High Pressure Studies of Semiconductors -- IV. Concluding Remarks -- Acknowledgments -- References -- Index -- Contents of Volumes in This Series.

Note: Front Cover -- Identification of Defects in Semiconductors, Volume 51B -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Optical Measurements of Point Defects -- I. Scope of the chapter -- II. Overview of the techniques -- III. Chemical Identification -- IV. Structural Identification -- V. Radiative lifetime effects -- VI. Spatial localization -- VII. Role of vibrations in "electronic" transitions -- VIII. Electronic excited states -- IX. Zero-phonon Lineshapes -- X. Conclusion -- References -- Chapter 2. Defect Identification Using Capacitance Spectroscopy -- I. Introduction -- II. Characteristics of Deep Levels -- III. Capacitance Spectroscopy Methods -- IV. Defect Identification -- V. Conclusions -- References -- Chapter 3. Vibrational Spectroscopy of Light Element Impurities in Semiconductors -- II. Local Vibrational Modes and Vibrational Spectroscopy -- III. Isotope Shifts -- IV. Anharmonicity -- V. Symmetry, Stress Alignment, and Reorientation Kinetics from Uniaxial Stress Data -- References -- Chapter 4. Defect Processes in Semiconductors Studied at the Atomic Level by Transmission Electron Microscopy -- I. Introduction -- II. Information from HRTEM Lattice Images -- III. Quantitative Analysis by Real-space Methods -- IV. Applications -- V. Conclusions -- References -- Chapter 5. Scanning Tunneling Microscopy of Defects in Semiconductors -- I. Introduction -- II. Imaging and Spectroscopic Techniques, Instrumentation -- III. The GaAs(110) Surface -- IV. Shallow Defects -- V. Deep Level Defects -- VI. Complex Defects -- VII. Conclusion -- References -- Chapter 6. Perturbed Angular Correlation Studies of Defects -- I. Introduction -- II. Experimental Method -- III. Substitutional Dopants -- IV. Light Elements and Transition Metals -- V. Intrinsic Defects -- VI. Summary and Outlook -- Acknowledgement -- References. , Index -- Contents of Volumes in This Series.

Note: Cover -- Half Title -- Series Page -- Title Page -- Copyright Page -- Dedication -- Table of Contents -- List of Figures -- List of Tables -- Series Editor's Foreword -- About the Editors -- List of Contributors -- Acknowledgments -- List of Abbreviations -- PART I: COMMUNICATION SCIENCE AND BIOLOGY -- 1 Introduction -- Introduction -- Communication and Biology: A Brief History -- Structure of the book -- Note -- References -- 2 Building Communication Science Through the Blueprints of D. C. Dennett and Robert Pirsig -- Craig's Meta-model -- The Epistemologies of Pirsig and Dennett -- How to Play Chess -- Research in Bio-Behavioral Aspects of Communication -- Objections to Biological Approaches to Communication Theory -- A Bright Future -- Note -- References -- PART II: EVOLUTIONARY PERSPECTIVES -- 3 Natural Selection and the Nature of Communication -- Some Physics Escapes the Realm of Entropy -- Natural Selection and Replicative Functional Order -- Replicative Order and Frame of Reference -- Genetic and Environmental Inheritance -- The Coevolution of Genome and Environment -- Communication and Systems of Evolved Meaning -- Evolution, Replicative Order, and Shannon's Theoryof Communication -- Communication and Learning -- Conflict and Deception as Features of Inter-Individual Communication -- Language Acquisition Involves Evolved Systems of Meaning -- Communication and Human Coalitions -- Conclusion -- References -- 4 Costly Signaling in Human Communication -- The Costly Signaling Mechanism -- Cost Types -- Receiver-IndependentCosts -- Receiver-Dependent Costs -- Applications of Costly Signaling to Human Communication -- Aggressive Intent Signals Maintained by Retaliation Costs -- Laughter as a Trust Barometer Maintained by Vulnerability Costs -- Conclusion -- References -- 5 Evolution, Structure, and Functions of Human Laughter. , The Acoustic Structure of Laughter -- Laughter Phylogeny -- Social Functions of Laughter -- Colaughter -- Conclusion -- References -- 6 Behavior Genetics and Twin Studies: Principles, Analytical Techniques, and Data Resources for Innovative Communication Research -- Principles of Behavior Genetics and Twin Studies -- Collecting and Analyzing Twin Data -- Analytical Approaches -- ACE Model Specifications and Fit -- Application of ACE Modeling -- Theoretical Implications -- Innovative Aplications in Communication Research -- Conclusion -- Notes -- References -- 7 Evolutionary Reasoning in Communication Scholarship: Generating and Testing Sound Hypotheses -- Nature Blindness in Media Research -- A Distorted Image of Biology -- Tinbergen's Four Whys -- Deriving and Testing Sound Hypotheses in Evolutionary Media Research -- Biology of the Human Mind -- Evolved Psychological Mechanisms as an Access Route for Empirical Testing -- Philosophy of Science in Evolutionary Psychology: Popper or Lakatos -- Conclusion -- References -- PART III: COMMUNICATION AND MEDIA NEUROSCIENCE -- 8 Mediated Messages and Synchronized Brains -- Capturing Collective Engagement -- Examining How Messages Convey Meaning -- Shared Processing Among Social Groups -- Future Research on Mediated Messages and Synchronized Brains -- Conclusion -- Notes -- References -- 9 The Neuroscience of Persuasion and Information Propagation: The Key Role of the Mentalizing System -- What is Mentalizing? -- The Involvement of Mentalizing in Persuasion, Socialinfluence, and Information Propagation -- Mentalizing in Communicators Increases Success of Social Influence -- Individual Differences in Mentalizing Are Associated with Successful Influence -- Mentalizing in Receivers Leads to Increased Likelihood of Social Influence -- Mentalizing Supports Information Transfer Between Communicators and Receivers. , Moderators of Mentalizing and Future Directions -- Message-Level and Contextual Considerations -- Development -- Cultural and Environmental Considerations -- Dynamic Brain and Social Networks -- Conclusion -- References -- 10 Social Media in Neuroscience Research -- Social Networks -- Social Network Size -- Social Network Density -- Intensity of Online Social Networking -- Problematic Online Social Network Use -- Social Influence -- Sharing Information -- Financial Decision-Making -- Conclusion -- References -- 11 A Cognitive Neuroscience Perspective on Political Knowledge, Misinformation, and Memory for "Facts" -- Memory in Public Opinion and Political Communication Research -- A Cognitive Neuroscience Perspective on Memory -- Multiple Memory Systems and Political Performance -- A False Memory Perspective on Political Misinformation -- Using Event-Related Potentials to Investigate False Memories -- Conclusion -- Notes -- References -- 12 Advancing the Synchronization Theory of Flow Experiences -- The Synchronization Theory of Flow -- Networks of Attention -- Emerging Empirical Evidence -- Hypothesis 1: Synchronization -- Hypothesis 2: Optimization -- Hypothesis 3: Outcomes -- Advancing the Synchronization Theory of Flow -- Theoretical Advance: Beyond the Tripartite Network Model -- Theoretical Advance: Individual Differences in Capacity and Control -- Methodological Advance: Dynamic Brain Networks -- Methodological Advance: Social Demand Tasks vs. Visuo-Motor Demand Tasks -- Applying Sync Theory -- Conclusion -- Note -- References -- 13 Attention, Working Memory, and Media Multitasking -- Neurophysiological Mechanisms of Atention and Multitasking -- Top-Down and Bottom-Up -- Large-Scale Dynamic Networks -- The Task-Positive Network -- The Task-Negative Network -- The Task-Switching Network -- Plasticity in Large-Scale Networks. , The Role of Media in Media Multitasking -- Motivational -- Accessible -- Cross- and Inter-Modal -- Non-Exhaustive -- Neurophysiological Dimensions of Media Multitasking -- Multiplexing -- Motivation -- Control -- Multitasking from a New Perspective -- References -- 14 Video Gaming: A Challenge for the Brain's Reward System? -- Classifying Problematic Video Gaming Behavior -- Neuroanatomy Overview -- The Reward System -- The Motor System -- Emotional Memory -- Cognitive Function -- Cue Exposure -- Attentional Bias -- Inhibition -- Conclusion -- Notes -- References -- 15 Biological Perspectives of Media Violence and Aggression -- Neurobiology of Trait Aggression -- Neuroimaging in Aggressive Individuals -- Neurogenetics of Aggression -- Neurobiology of State Aggression -- Paradigms for Aggression Research -- Taylor Aggression Paradigm -- Neuroimaging -- Point Subtraction Aggression Paradigm -- Verbal Provocation Tasks -- Frustration Tasks -- Imagined Aggression -- Neurobiology of Media Aggression and Violence -- Media Violence and Aggression Networks -- Effects of Media Violence Exposure -- Media Violence and the Brain Reward System -- Conclusion -- References -- 16 Virtual Reality for Communication Neuroscience -- Basic Questions -- Why Is VR Interesting? -- How Does VR Work? -- Technical Components -- Varieties of Experience -- Advantages and Limitations of the VR Medium -- Advantages of the VR Medium -- Limitations of the VR Medium -- Fundamental Issues -- Perception-Action Coupling -- Toward a "Virtuality Network" -- When Virtual Reality Becomes Useful -- New Methods and Phenomenology -- Additional Considerations -- Emerging Challenges -- Opportunities for Open Science -- Future Directions -- Additional Information -- References -- 17 Is There a Cultural Brain? Analyzing Individual Differences in Processing Media Messages -- Individual Differences. , First Approach to Individual Differences: Ignore Them -- Second Approach to Individual Differences: Beg the Question -- Third Approach to Individual Differences: Treat Them as a Nuisance -- Fourth Approach to Individual Differences: Leverage Them -- Leveraging Neural Variability to Understand Communication Phenomena -- Incorporating Culture and Loking to the Future -- Notes -- References -- 18 Neuromarketing: How to Choose the Right Measures -- Review of Pretesting Research -- The Promise of Neuromarketing Measures -- Pretesting Advertising with Traditional Measures -- Functional Magnetic Resonance Imaging (fMRI) Studies -- Electroencephalogram (EEG) Studies -- Physiological Measures -- Summary -- Choosing the Right Vendor -- A Framework for Choosing Vendors -- Conclusion -- References -- 19 Investigating Communication Using Peripheral Nervous System Measurement -- A Brief Description of the Peripheral Nervous System -- Measuring Cardiac Activity -- Measuring Visual Attention -- Measuring Electrodermal Activity -- Measuring Electromyographic Activity -- Conclusion -- References -- 20 The State of the Art and the Future of Functional Magnetic Resonance Imaging in Communication Research -- A Whirlwind Tour of fMRI -- Some Words of Caution -- Current Advances in Communication Neuroscience -- The Brain-as-Predictor Approach (BAP): From Neural Activity to Population Outcomes -- Intersubject Correlation Analysis (ISC): Synchrony Across Brains -- Multivoxel Pattern Analysis (MVPA): Decoding Brain Activity -- Future Avenues for fMRI in Communication Research -- Combining fMRI and Computational Content Analysis -- Hyperscanning -- Real-time fMRI (Neurofeedback) -- Notes -- References -- PART IV: INTERPERSONAL COMMUNICATION -- 21 Emotion and Emotional Communication -- Alexithymia -- Psychological and Relational Outcomes -- Physiological Outcomes. , Social Anhedonia.

Note: Front Cover -- Nonlinear Optics in Semiconductors II -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Second Order Nonlinearities and Optical Rectification -- I. Introduction -- II. Second-Order Nonlinear Effects in Bulk Semiconductors -- III. x(2) Experiments in Bulk Semiconductors -- IV. Second-Order Susceptibility in Semiconductor Quantum Wells and Superlattices -- V. Optical Rectification and Terahertz Emission in Semiconductors -- VI. Conclusions -- List of Abbreviations and Acronyms -- Refrences -- Chapter 2. Nonlinearities in Active Media -- I. Introduction -- II. Active Semiconductor Media -- III. Measurement Techniques -- IV. Nonlinear Index of Refraction in Active Media -- V. Data Analysis and Interpretation -- VI. Shaping and Saturation of Short Pulses in Active Waveguides -- VII. Four-Wave Mixing -- VIII. Applications -- IX. Summary -- References -- Chapter 3. Optical Responses of Quantum Wires/Dots and Microcavities -- I. Theoretical Aspects -- II. Experimental Results -- Refrences -- Chapter 4. Semiconductor Nonlinearities for Solid-state Laser Modelocking and Q-Switching -- I. Introduction -- II. Semiconductor Saturable Absorber Mirrors (SESAMs) -- III. SESAM Designs -- IV. Passively Modelocked Solid State Lasers Using SESAMs -- V. Passively Q-Switched Solid State Lasers Using SESAMs -- VI. Conclusions and Outlook -- List of Abbrevations and Acronyms -- References -- Chapter 5. Transient Grating Studies of Carrier Diffusion and Mobility in Semiconductors -- I. Optical Nonlinearities and Carrier Transport -- II. Transient Gratings -- III. Bulk Semiconductors -- IV. Exciton Saturation in MQWs -- V. In-Well Transport in MQWs -- VI. Cross-Well Transport in QWs -- VII. Hetero-n-i-pi Structures -- VIII. Conclusions -- References -- Index -- Contents of Volumes in This Series.

Note: Front Cover -- Sic Materials and Devices -- Copyright Page -- Contents -- List of Contributors -- Introduction -- Chapter 1. Materials Properties and Characterization of SiC -- I. Introduction -- II. Structural Properties -- III. Thermal Properties -- IV. Optical Properties -- V. Electrical Properties -- VI. Summary -- References -- Chapter 2. SiC Fabrication Technology: Growth and Doping -- I. Introduction -- II. SiC Bulk Crystal Growth -- III. SiC Epitaxial Growth -- IV. SiC Doping -- V. Conclusions -- References -- Chapter 3. Building Blocks for SiC Devices: Ohmic Contacts, Schottky Contacts, and p-n Junctions -- I. Introduction -- II. Electrical Properties of Metal-SiC Systems -- Ill. Surface Preparation Techniques -- IV. Metal Contacts to 6H-SiC -- V. Metal Contacts to 4H-SiC -- VI. Metal Contacts to 3C-SiC -- VII. SiC p-n Junctions Diode Rectifiers -- VIII. Summary and Conclusions -- References -- Chapter 4. SiC Transistors -- I. Introduction -- II. SiC Field-Effect Transistors: MOSFETs, MESFETs, and JFETs -- III. SiC Microwave Field-Effect Transistors -- IV. SiC Digital Integrated Circuits -- V. SiC Bipolar Transistors and Thyristors -- VI. Two-Dimensional Modeling of SiC Transistors -- VII. Analytical Transistor Models and Circuit Simulation (AIM-Spice) -- VIII. Potential Performance and Applications of SiC Transistors and Integrated Circuits -- References -- Chapter 5. SiC for Applications in High-Power Electronics -- I. Introduction -- II. Bulk SiC Growth -- III. Epitaxial Growth of SiC -- IV. Advantages of SiC for High-Power RF Systems -- V. The SiC MESFET: Design Considerations -- VI. MESFET Fabrication -- VII. 6H-SiC MESFET Results -- VIII. 4H-SiC MESFET Results -- IX. The SiC SIT: Design Considerations -- X. SIT Fabrication -- XI. 6H-SiC SIT Results -- XII. 4H-SiC SIT Results -- XIII. 450 W UHF SIT -- XIV. 2.0 kW UHF Module. , XV. S-band SiC SITs -- XVI. S-band SIT Device Scale-up -- XVII. SiC Power Switching Devices -- XVIII. Conclusions -- References -- Chapter 6. SiC Microwave Devices -- I. Introduction -- II. Background -- III. Semiconductor Material and Contact Properties -- IV. Semiconductor Device Models -- V. Temperature Effects -- VI. RF Active Devices -- VII. Summary -- References -- Chapter 7 SiC-Based UV Photodiodes and Light-Emitting Diodes -- I. Introduction -- II. SiC Blue LEDs -- III. SiC Green LEDs -- IV. UV Photodiodes -- V. Group III-Nitrides on 6H-SiC -- VI. Summary -- References -- Chapter 8. Beyond Silicon Carbide! III-V Nitride-Based Heterostructures and Devices -- I. Introduction -- II. Strain and Structural Defects -- III. Optical Manifestation of Defects -- IV. Applications -- V. Conclusions -- References -- Index -- Contents of Volumes in this Series.