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  • Articles  (37)
  • 2020-2022  (2)
  • 1990-1994  (35)
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  • 1
    facet.materialart.
    Unknown
    In:  http://aquaticcommons.org/id/eprint/15928 | 12051 | 2015-01-16 08:52:26 | 15928 | Indian Fisheries Association
    Publication Date: 2021-07-11
    Description: Seasonal variation in some physico-chemical properties of Rushikulya estuary was studied. The surface water temperature varied from 20 to 34.5 degree C, the transparency of the water from 6.3 to 12 cm, the salinity from 28.3 to 32.8 % and the pH from 6.77 to 7.35. The transparency and salinity showed bimodal distribution. Occurrence of the Chanos fry were correlated to it.
    Keywords: Chemistry ; Environment ; temperature data ; nursery grounds ; seasonal variations ; salinity data ; estuary ; Chanos chanos ; marine ; Rushikulya river ; Odisha ; Orissa ; India
    Repository Name: AquaDocs
    Type: article
    Format: application/pdf
    Format: application/pdf
    Format: 69-71
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  • 2
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    In:  http://aquaticcommons.org/id/eprint/23705 | 18721 | 2018-07-20 07:21:20 | 23705 | Iranian Fisheries Science Research Institute
    Publication Date: 2021-07-15
    Description: During the decade 1991-2001, culture of Indian White Shrimp grew rapidly in Iran due to high profitability, but afterwards suffered a decreasing trend with many farms still being idle after Construction. The trend occurred mainly due to (1) increase in production costs with simultaneous decrease in international shrimp market price, (2) Agro-climatic conditions that favored only one crop a year, which is not profitable, and (3) fear about spread of disease as already experienced in the case of white spot disease in Khouzestan and Bushehr provinces. Based on these facts, we aimed in our study to increase production of the shrimp per year, to reduce days of culture (DOC) in second crop through nursery system, to control food conversion ratio (FCR), and to manage shrimp production in Gwatar shrimp farming complex. Six farms were selected, and in three we applied two crops a year production system using nursery for the second crop. In other three farms one crop was harvested. Shrimps in two-crop farms were kept 52 days of the second crop in nursery and then transferred to grow-out ponds. All farms harvested before DOC 128. Mean productions per hectare in the first and second crop were 1794 and 1691kg, respectively. The FCR dropped from 1.6 in the first to 1.27 in the second crop. Total production per hectare per year reached 3485kg in two-crop farms. Shrimps in one-crop farms were harvested mainly at DOC 145. The mean production per ha/year and FCR of one-crop farms reached 2089kg and 1.65 respectively. We harvested around 47114kg of shrimps in each two-crop farm which was 17 tons more than one-crop farms. The results of this study showed that production of shrimps in two crops a year system could be continued with pre-designed schedules. We presented a time table for two crops a year culture system.
    Keywords: Aquaculture ; Shrimp Farming ; Indian White Shrimp ; Fenerropenaeus indicus ; Persian Gulf ; Gwatar ; Iran
    Repository Name: AquaDocs
    Type: article , TRUE
    Format: application/pdf
    Format: application/pdf
    Format: 139-148
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4023-4029 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputter-deposited Ni80Cr20 films on sputter-cleaned Si substrates contain an amorphous layer at the substrate/film interface whose composition is a mixture of all the elements present at the interface. Subsequent thermal processing at 300 °C for 30 min produces a new segregated Cr-rich amorphous layer as Ni atoms preferentially diffuse through and react with the initial amorphous layer and the silicon substrate. Further annealing results in the growth of uniform nanoscale NiSi layers, as long as the segregated a layer is sustained. The amorphous layers eventually crystallize at ∼500 °C and Kirkendall voids are observed at 550 °C. Whereas the formation of intermixed amorphous layers from metal–metal or metal–silicon systems has been reported by several authors, the segregated amorphous layer arising out of the interdiffusion and reaction between a metal alloy and Si is of both fundamental and technological interest due to its thermal stability and ability to control the silicide growth. In this work, we describe the evolution of both kinds of amorphous layers, i.e., intermixed and segregated, so as to elucidate their origins. The evolution of the two a layers is also observed when monolayers of Pt are introduced prior to NiCr deposition. In this case, the growth of the segregated amorphous layer is retarded and it dissolves earlier during thermal annealing.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3765-3769 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stoichiometric films of cupric and cuprous oxide are deposited on Si, MgO, and Y-ZrO2 substrates by pulsed excimer laser ablation technique. It is found that the equilibrium phase diagram based considerations dictate the phase formation. The films are characterized by small-angle x-ray diffraction, infrared, and UV-visible spectroscopies and Rutherford backscattering spectroscopy. It is shown that epitaxy of Cu2O films can be realized on single crystal MgO (100) substrates and the corresponding film resistivity is of the order of 40–60 Ω cm.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1985-1987 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A surface conductivity-type inversion has been observed following low-energy (400 eV), high-dose, hydrogen implantation of p-type silicon. Detailed structural, chemical, and electrical examination of the surface revealed that the inversion resulted from hydrogen forming n-type complexes with extended defects.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 729-731 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Following heat treatments of Pt encapsulated Ni80Cr20 thin films on silicon substrates at temperatures ranging from 300 to 500 °C, it has been discovered that Cr atoms segregate at the original NiCr/Si interface to form an amorphous layer, while Ni atoms diffuse into the Si to form Ni silicide. The Cr-rich amorphous layer acts as a "semipermeable membrane'' which selectively passes Ni to form a very uniform NiSi layer.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2241-2243 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe how the unique growth environment provided by a multilayer Co/Ti(O)-Si structure leads to the formation of epitaxial CoSi2/Si(100). A key factor is the preferential nucleation of (311) CoSi which is the dominant phase from 650 to 800 °C in this multilayer system. Epitaxial CoSi2 then nucleates at the (311) CoSi/(100) Si interface and grows during a 900 °C second annealing. Having Ti as the first layer in contact with the Si substrate reduces the native Si oxide and residual impurities. The amorphous Ti(O) provides a uniform supply of slowly diffusing Co that promotes preferential CoSi formation. The upper Co and Ti layers serve to stabilize the reaction and suppress agglomeration.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3173-3175 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The localized formation of continuous silicide layers via solid state reaction of nickel atoms with ion implantation preamorphized silicon is described. Ni films 12 nm thick were evaporated on 65 nm deep amorphized surface layers. The silicidation reaction was induced by two stage thermal annealing at 360 and 400 °C, well below the solid phase epitaxial regrowth temperature for amorphous Si and the normal NiSi2 formation temperature. Rutherford backscattering with channeling, XTEM, and four-point-probe measurements were used to determine the structure, interfacial morphology, composition, and resistivity of the silicide films. After the lower temperature annealing stage a continuous layer of NiSi2 is formed with an underlying residual amorphous region located above the crystalline substrate. During a second annealing the residual amorphous areas recrystallize epitaxially with respect to the substrate via lateral silicide growth. The process leads to formation of a continuous 35 nm thick nickel disilicide layer completely confined within the original amorphous region. Silicide resistivity was 44 μΩ cm. The process may be viewed as a low-temperature process enhancement to self-aligned silicide (SALICIDE) technology since silicide growth proceeds only on preamorphized areas of the silicon substrate.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1519-1521 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we describe procedures for forming continuous, planar, and thermally stable 12-nm-thick CoSi2 layers via Co/Si interaction through an interfacial Ti(O) diffusion barrier layer. Three Co and three Ti layers were deposited sequentially on Si-(100) substrates by dual source thermal evaporation with Ti as the first layer. Oxygen was found to be selectively incorporated into all Ti layers during deposition. Following a 550 °C, 2 h anneal the morphology of the silicide layer depended strongly on the thickness of the initial Ti(O) layer. For an initial Ti(O) layer of ∼5 nm, both Co and Si readily diffused to form a Co silicide interfacial layer with a very rough, faceted interface. Increasing the Ti(O) thickness to ∼10 nm stopped Si out diffusion and reduced Co in diffusion such that a uniform 6 nm CoSix interfacial layer formed. Selective removal of the upper layers and a 750/800 °C annealing produced a 12 nm CoSi2 layer with a resistivity of ∼28 μΩ cm.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1933-1935 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we examine the interdiffusion and reaction of deposited cobalt layers during the formation of nanoscale (〈35 nm) silicide films on heavily phosphorus doped polycrystalline silicon films. The onset of morphological instability is indicated by an increase of layer resistivity. Cross-section transmission electron micrographs of high resistance films, which were formed by rapid thermal annealing at 700 °C for 30 s, show a series of disconnected "islands'' of CoSi2 with or without a highly disordered (amorphous) Si-rich top surface layer. A continuous band of voids, attributed to the Kirkendall effect and to phase transformation induced volume changes, initially appear at the CoSi/CoSi2 interface. In the highly agglomerated films, these voids separate the buried CoSi2 islands and buried polycrystalline Si from the disordered surface layer. The sequence of events is analyzed in terms of grain boundary diffusion, grain boundary grooving, and the impact of phosphorus concentration (∼1020 cm−3) on Si diffusivity.
    Type of Medium: Electronic Resource
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