GLORIA — GEOMAR Library Ocean Research Information Access

1

Electronic Resource

Anomalous temperature dependence of photoluminescence from InAs quantum dots (2000)

Jiang, W. H. ; Ye, X. L. ; Xu, B. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 2529-2532

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Self-assembled InAs quantum dots are fabricated on a GaAs substrate by molecular beam epitaxy. The dots are covered by several monolayers of In0.2Ga0.8As before a GaAs cap layer and an in situ postgrowth annealing is performed to tune the emission to higher energy. The temperature dependence of photoluminescence from this structure demonstrates a slower redshift rate of the peak position, a gradual broadening of the linewidth and an abnormal enhancement of integrated intensity as the temperature is increased from 15 to 300 K. These phenomena are closely related to the introduction of an InGaAs layer and to the intermixing of In and Ga atoms during annealing. We propose a model to explain the unusual increase in PL intensity, which fits the experimental data well. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1288231

Permalink

	Location	Call Number	Limitation	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

2

Electronic Resource

Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots (2000)

Liu, H. Y. ; Xu, B. ; Chen, Y. H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 5433-5436

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The size and shape evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0 ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9 ML deposition on GaAs(100) substrate. Based on comparisons with the formation of large incoherent InAs islands on single-layer samples at late growth stage, the larger coherent InAs quantum dots at 2.9 ML deposition has been observed on the second InAs layer. A simple model analysis accounting for the surface strain distribution influenced by buried islands gives a stronger increment of critical QD diameter for dislocation nucleation on the second layer in comparison with the single-layer samples. Additionally, the inhibition of dislocation nucleation in InGaAs/GaAs large islands can also be explained by our theoretical results. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1318371

Permalink

	Location	Call Number	Limitation	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

3

Electronic Resource

Self-organized type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots realized on GaAs(311)A (2000)

Liu, H. Y. ; Zhou, W. ; Ding, D. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 76 (2000), S. 3741-3743

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Self-organized In0.55Al0.45As/Al0.50Ga0.50As quantum dots are grown by the Stranski–Krastanow growth mode using molecular beam epitaxy on the GaAs(311)A substrate. The optical properties of type-II InAlAs/AlGaAs quantum dots have been demonstrated by the excitation power and temperature dependence of photoluminescence spectra. A simple model accounting for the size-dependent band gap of quantum dots is given to qualitatively understand the formation of type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots driven by the quantum-confinement-induced Γ→X transition. The results provide new insights into the band structure of InAlAs/AlGaAs quantum dots. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.126768

Permalink

	Location	Call Number	Limitation	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext