Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 5592-5594
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The Au/n-Si Schottky barrier (SB) which contains hydrogen has a 0.10 eV lower SB height (SBH) than that without hydrogen. For the hydrogen-containing SB, zero bias annealing (ZBA) decreases the SBH while reverse bias annealing (RBA) increases it. In addition, ZBA and RBA cycling experiments have been made which reveal a reversible change of the SBH within at least four cycles. The annealing temperature of ZBA and especially of RBA influences the SBH. We interpret the above effect in terms of an interaction between hydrogen and metal-semiconductor interface states.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357163
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