Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 641-643
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Hydrogen was incorporated into B-doped p-type crystalline silicon in three different ways: boiling the sample in water, exposing the sample to hydrogen plasma, growing silicon in a hydrogen atmosphere. Al-contact Schottky barrier diodes were made on both the hydrogenated and unhydrogenated samples. It was found that the Schottky barrier height (SBH) is increased due to the hydrogenation. The current-voltage measurement showed an increase of 0.06–0.10 eV in the effective SBH and the activation energy measurement revealed an increase of 0.07–0.09 eV in the SBH under a forward bias of 0.15 V. If the silicon grown in a hydrogen atmosphere was thermal annealed at 650 °C to drive out hydrogen before Schottky metallization, then the SBH approached that of the unhydrogenated sample. It is demonstrated that the SBH in Al/p-Si can be increased with hydrogen incorporated in silicon.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102723
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