In:
Semiconductor Science and Technology, IOP Publishing, Vol. 37, No. 5 ( 2022-05-01), p. 05LT01-
Abstract:
Via the density functional theory, the phase diagrams of HZO thin film in MFM (M = TiN, F = HZO) and MFI (I = α -SiO 2 ) structures are constructed with dependences on grain size and temperature. In both MFM and MFI, the region for orthorhombic phase (o-phase) in phase diagram grows when HZO thickness gets thinner. Comparing to MFM, HZO/ α -SiO 2 interface in MFI suppresses the growth of tetragonal phase (t-phase) to the region of very small grain size ∼1.2 nm. The simulation results agree with the experimental observation by Cheema et al , that the enhanced FE property was obtained in a MFIS (S = silicon) device with ultrathin HZO film ( 〈 2 nm). Simulation model indicates more chemical bonds forming between HZO and α -SiO 2 interface could stabilize o-phase to greatly enhance the FE property in a MFIS device.
Type of Medium:
Online Resource
ISSN:
0268-1242
,
1361-6641
DOI:
10.1088/1361-6641/ac5a5e
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
54647-1
detail.hit.zdb_id:
1361285-2
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