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  • Pellegrino, J. G.  (4)
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  • 1
    Online Resource
    Online Resource
    Interface sharpness during the initial stages of growth of thin, short-period III–V superlattices
    American Vacuum Society ; 1993
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 11, No. 4 ( 1993-07-01), p. 917-922
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 11, No. 4 ( 1993-07-01), p. 917-922
    Abstract: Superlattices composed of III–V heterostructures have established applications in high-speed electronic and optoelectronic devices. As layer thicknesses are reduced, the role of heterostructure interface sharpness becomes more critical to ensuring high quality two-dimensional growth. In this work, short-period (less than 1 nm) superlattices with active layer thicknesses of 31 nm were investigated to assess interface roughness in the initial stages of growth. X-ray diffraction was used to evaluate interface roughness and to calculate superlattice periodicity. Results suggest that surface roughening by islanding may be promoted by GaAs buffer layers that are 10–100 nm thick. Smoother interfaces were obtained in samples with buffer layers 250 nm and greater.  
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.578327
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1993
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Interface roughness of short-period AlAs/GaAs superlattices studied by spectroscopic ellipsometry
    AIP Publishing ; 1993
    In:  Journal of Applied Physics Vol. 73, No. 11 ( 1993-06-01), p. 7739-7746
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 73, No. 11 ( 1993-06-01), p. 7739-7746
    Abstract: Spectroscopic ellipsometry (SE) has been used to study the effects of interface roughness on the optical properties of ultrathin short-period 3×3 GaAs/AlAs superlattices grown by molecular-beam epitaxy (MBE). The complex dielectric function and thickness of the whole superlattice and the thickness of the native oxide overlayer were simultaneously determined by an inversion technique from data in the 1.5–5.0 eV region. The main optical critical points E0, E0+Δ0, E1, E1+Δ1, and E2 were deduced by line-shape fitting of the second derivative of the complex dielectric function of the superlattice to the analytical line-shape expression. The interface roughness is found to shift the optical transitions, except E2, to higher energy and broaden their line shapes. A simple interpretation of the shift and broadening is given. The interface roughness and layer thicknesses obtained by SE are found to be consistent with the results of x-ray diffraction and Raman scattering studies previously reported. The results in this study demonstrate the capability of the post-growth nondestructive characterization by SE to provide useful information about the interface quality of superlattice structures, and consequently to optimize the MBE growth conditions in order to achieve the desired structural parameters.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.353972
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1993
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 3
    Online Resource
    Online Resource
    Spectroscopic ellipsometry determination of the properties of the thin underlying strained Si layer and the roughness at SiO2/Si interface
    AIP Publishing ; 1994
    In:  Applied Physics Letters Vol. 64, No. 20 ( 1994-05-16), p. 2688-2690
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 64, No. 20 ( 1994-05-16), p. 2688-2690
    Abstract: The existence of both the strain and microroughness at the interface of thermally grown SiO2 films on Si was ascertained unambiguously for the first time by high accuracy spectroscopic ellipsometry. The dielectric function of the interface was determined by a comprehensive data analysis procedure. By carefully examining the dielectric function obtained by our model, the strain was seen to cause a red shift of 0.042 eV of the interband critical point E1 compared with the bulk silicon value. The thickness of the interface region was found to be 2.2 nm of which a significant part is due to the strain.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.111492
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1994
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
    Online Resource
    Online Resource
    Buffer layer–modulation-doped field-effect-transistor interactions in the Al0.33Ga0.67As/GaAs superlattice system
    American Vacuum Society ; 1995
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 13, No. 3 ( 1995-05-01), p. 787-791
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 13, No. 3 ( 1995-05-01), p. 787-791
    Abstract: The correlation between the structural and transport properties for a series of high-quality modulation-doped field-effect-transistor (MODFET) structures was made for various growth temperatures. X-ray reflectivity, x-ray diffraction, and magnetotransport measurements were used to assess structural quality and transport parameters. Four samples with growth temperatures in the range 500–630 °C were examined. The results show a correlation exists between the measured electron mobility and the quality of the interface width, as measured from satellite peaks of the buffer layer. In addition, these results show, for the first time to the best of our knowledge, that a direct correlation can be made between x-ray reflectivity structural measurements and the measured electron mobility of high-quality gallium–arsenide-based MODFETs. Both x-ray and transport results suggest a higher-quality structure was obtained at higher growth temperatures.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.579828
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1995
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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