In:
Applied Physics Express, IOP Publishing, Vol. 15, No. 10 ( 2022-10-01), p. 104002-
Abstract:
We report on the impact of the 3 nm thick ex situ AlGaN regrown layer prior to insulator deposition on the interfacial properties of Al 2 O 3 /AlGaN/GaN metal–insulator–semiconductor (MIS) structures. MIS-capacitors (MIScaps) with regrown AlGaN layer exhibited anomalously excessive threshold voltage shift compared to reference sample without regrown AlGaN, suggesting highly reduced interface states density ( D it ). Moreover, MIScaps with regrown AlGaN layer exhibited “spill-over” in the capacitance–voltage profiles, further evidencing the improved Al 2 O 3 /AlGaN interfaces. Fabricated three-terminal MIS-HEMTs with regrown AlGaN showed less hysteresis in transfer curves, enhanced maximum drain current, and increased linearity over the reference device.
Type of Medium:
Online Resource
ISSN:
1882-0778
,
1882-0786
DOI:
10.35848/1882-0786/ac8f13
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
2417569-9
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