In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 1R ( 1991-01-01), p. 180-
Abstract:
Asymmetrical emission profiles were observed on such spectral lines as F I 703.7 and S II 545.4 nm from SF 6 discharge, and N 2 337.1 and N 2 + 391.4 nm from N 2 discharge. The intensity ratio of N 2 + 391.4 to N 2 337.1 clearly shows that the observed asymmetries originate from the asymmetrical field distribution induced by an electrically floating Si-wafer mounted on one of the two plane electrodes.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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