In:
IEEJ Transactions on Electronics, Information and Systems, Institute of Electrical Engineers of Japan (IEE Japan), Vol. 122, No. 1 ( 2002), p. 29-35
Type of Medium:
Online Resource
ISSN:
0385-4221
,
1348-8155
Uniform Title:
AlGaN/GaN HJFETにおける低抵抗コンタクト形成とK帯高出力特性
DOI:
10.1541/ieejeiss1987.122.1_29
Language:
English
,
Japanese
Publisher:
Institute of Electrical Engineers of Japan (IEE Japan)
Publication Date:
2002
detail.hit.zdb_id:
2218976-2
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