Publikationsdatum:
2018-06-16
Beschreibung:
Publication date: September 2018 Source: Vacuum, Volume 155 Author(s): M. Gurubhaskar, Narayana Thota, M. Raghavender, G. Hema Chandra, P. Prathap, Y.P. Venkata Subbaiah SnS thin films were prepared using a simple two-stage process. The two-stage process involved in sputtering of Sn over glass substrate followed by sulfurization of sputtered Sn at 350 °C. The sulfurization process was carried out in the ambience of sulfur for different time lengths, 10–120 min and its influence on physical properties are reported. XRD study showed that the films sulfurized at 10 min were poor in crystallinity with reflections of un-reacted tin and sulfur. As the sulfurization time (S t ) is increased to 60 min, a single phase orthorhombic SnS was observed with (111) preferred plane. Four distinct Raman modes at 95, 163, 190 and 220 cm −1 confirms the formation of SnS for S t > 30 min, however, S t 〈 30 min treated Sn films had extra Raman peak at 489 cm −1 related to S x phase. The ratio of Sn/S was found to be 2.92 for 10 min and reached stoichiometric ratio with densely packed grain morphology for 60 min. The optimized films showed a direct band-gap of 1.35 eV. The XPS oxidation states of Sn and S were found to be (+2) and (−2), indicating the formation of SnS. The S t dependent electrical measurements are also reported and discussed.
Print ISSN:
0042-207X
Digitale ISSN:
1879-2715
Thema:
Maschinenbau
,
Physik
