Publication Date:
2014-12-19
Description:
Publication date: March 2015 Source: Ultramicroscopy, Volume 150 Author(s): Dmitry Tyutyunnikov , V. Burak Özdöl , Christoph T. Koch In this paper we introduce an approach for simultaneous thickness and orientation mapping of crystalline samples by means of transmission electron microscopy. We show that local thickness and orientation values can be extracted from experimental dark-field (DF) image data acquired at different specimen tilts. The method has been implemented to automatically acquire the necessary data and then map thickness and crystal orientation for a given region of interest. We have applied this technique to a specimen prepared from a commercial semiconductor device, containing multiple 22 nm technology transistor structures. The performance and limitations of our method are discussed and compared to those of other techniques available.
Print ISSN:
0304-3991
Topics:
Electrical Engineering, Measurement and Control Technology
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Natural Sciences in General
,
Physics
