In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 6S ( 2013-06-01), p. 06GG02-
Abstract:
The electrical characteristics of metal–insulator–semiconductor (MIS) capacitor employing nanocomposite poly(methyl methacrylate):titanium dioxide (PMMA:TiO 2 ) as insulator and zinc oxide (ZnO) as the semiconductor were discussed. The capacitance of the MIS devices was found to be 0.42 and 0.29 nF at frequency of 1 kHz and 1 MHz respectively. Meanwhile, the dielectric loss values are constant (∼60×10 -3 ) in the frequency range from 100 Hz to 100 kHz. Current–voltage ( I – V ) results for MIS are much higher than MIM is due to there is a trapped holes/electron located at the semiconductor–insulator interface which contributes to high leakage current in the MIS device. We conclude, although interposing the PMMA:TiO 2 nanocomposite insulator layer between the semiconductor and Al electrodes degrades the MIS device performance, nevertheless, they remain sufficiently good for use in organic electronic devices.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.06GG02
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
