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  • 1
    Publication Date: 2022-05-25
    Description: Author Posting. © Elsevier B.V., 2006. This is the author's version of the work. It is posted here by permission of Elsevier B.V. for personal use, not for redistribution. The definitive version was published in Progress In Oceanography 70 (2006): 91-112, doi:10.1016/j.pocean.2006.07.002.
    Description: Gabriel T. Csanady turned 80 in December 2005 and we celebrate it with this special Progress in Oceanography issue. It comprises 20 papers covering some of the many areas that Gabe contributed significantly throughout his professional career. In this introductory paper we briefly review Gabe’s career as an engineer, meteorologist and oceanographer, and highlight some of his major contributions to oceanography, both as a scientist as well as an educator. But we also use this opportunity to remember and thank Gabe, and his wife Joyce, for being such good friends and mentors to several generations of oceanographers. The authors of the collection of papers in this volume deserve special thanks for their efforts. We also are pleased to acknowledge the support of Progress in Oceanography’s editor, Detlef Quadfasel, and the many anonymous reviewers who generously contributed their time and expertise.
    Keywords: Csanady ; Oceanographer ; Biography ; Ocean circulation ; Turbulent diffusion ; Air-sea interaction
    Repository Name: Woods Hole Open Access Server
    Type: Preprint
    Format: 819031 bytes
    Format: application/pdf
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4842-4845 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The viscosity of Pd77Cu6.5Si16.5 was measured from 995 to 1183 K by capillary flow method. In the experiment, fluxing of the molten specimen by boron oxide was necessary in order to inhibit the formation of crystallites at temperatures near its liquidus. It was found that the viscosity can be described very well by the following Vogel–Fulcher equation: ln η=−3.764+938.543/(T−726), where T is in K. No discontinuity in viscosity was observed at the thermodynamic melting temperature. Recently Tsao and Spaepen [Amorphous Materials: Modeling of Structure and Properties, edited by V. Vitek (The Metallurgical Society of AIME, New York, 1983), p. 323] determined the equilibrium viscosity of the same system near the glass transition temperature. It turned out that the viscosity data from the two regimes cannot be joined together by a single Vogel–Fulcher equation of constant parameters. Finally the present results were compared with those earlier viscosity data of Pd40Ni40P20 and Au77Ge13.6Si9.4 [D. E. Polk and D. Turnbull, Acta Metall. 20, 493 (1972)] to test the validity of the principle of corresponding states for atomic transport properties.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4837-4841 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The viscosity of molten Pd40Ni40P20 was measured from 980 to 1160 K by capillary flow method. At temperatures below its liquidus ∼1030 K, the measurement was carried out with the molten specimen immersed in anhydrous boron oxide flux in order to inhibit the formation of small crystallites. In the presence of crystallites, the viscosity values were scattered and also were considerably larger than those of crystallite free liquid. The viscosity of crystallite free molten Pd40Ni40P20 can be described by the following Vogel–Fulcher equation: ln η=−4.072+1310.1/(T−551). The curve here cannot be joined to those viscosity data of Volkert and Spaepen [Mater. Sci. and Eng. 97, 449 (1988)] of the same system near the glass transition temperature by a single Vogel–Fulcher equation of constant parameters. Earlier, Polk and Turnbull [D. E. Polk and D. Turnbull, Acta Metall. 20, 493 (1972)] determined the viscosity of molten Au77Ge13.6Si9.4 also by the capillary method. Their results were compared with the current work and it was found that the principle of corresponding states apparently holds here and the reduced temperature is defined as T/Tg.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4282-4289 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-shot laser damage of thin Cr films on glass substrates has been studied to understand the cracking and peeling-off mechanism. A mathematical model is developed for the calculation of transient heat transfer and thermal stresses in Cr films during excimer laser irradiation and cooling, the transient temperature, and the stress–strain fields are analyzed by using a three-dimensional finite-element model of heat flow. The finite-element program ABAQUS, with user subroutines, is adopted to perform the numerical analysis. A KrF excimer laser is used in experiments as a source of UV radiation. Morphological inspection of damaged Cr films is carried out by using scanning electron microscopy and the threshold fluences for visible damages are investigated for various film thicknesses. According to the numerical analysis for the experimentally determined cracking and peeling-off conditions, cracking is found to be the result of the tensile brittle fracture due to the excessive thermal stresses formed during the cooling process, while peeling off is found to be the combined result of films bulging from the softened glass surface at higher temperature and the tensile brittle fracture during the cooling process. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4498-4502 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three series of NdxTbyFe1−x−y−zCoz films have been fabricated for their potential application in magneto-optical recording: (i) x=0–0.20, Tb was adjusted so that the coercivity at room temperature was 5–10 kOe; (ii) x+y=0.28–0.32 with x in the range of 0 to 0.25; and (iii) x+y=0.21–0.23 with x in the range of 0 to 0.17. These films have been characterized both optically and magneto-optically by Kerr hysteresis trace, variable angle of incidence ellipsometry, and normal angle of incidence Kerr spectroscopy. From these measurements, the optical constants (n and k), magneto-optical constants (Q1 and Q2), and maximum possible figure of merit (FOM) have been determined at wavelengths of 405, 546, and 633 nm. Results demonstrate that the magneto-optical behavior of NdTbFeCo films is sensitive to the concentration of both Nd and Tb in the film. For samples in the series (i), the addition of Nd into TbFeCo alloys was shown not to enhance their magneto-optic behavior at the short wavelengths. For samples in the series (ii) and (iii), the substitution of Nd improves the magneto-optical performance greatly at blue light. But at red and green wavelengths it has little effect on the magneto-optical properties in samples in the series (iii) or degrades in samples in the series (ii). The maximum enhancement in the FOM is about 25% at x∼10% for blue light. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5670-5670 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes a simple and convenient simulation method, which uses analytical models for mark and beam patterns. The readout signal of optical disk system is obtained by two-dimensional convolution of Gaussian intensity beam pattern and elliptical mark pattern. Then, signal spectrum is obtained by executing a fast Fourier transform algorithm after adding quantitative MO noise sources within bandwidth. For simulation, the two-dimensional distributions of mark reflectivity and beam intensity were digitized, which enabled us to use easily available algorithm routines in digital signal processing. The resolution of the beam and mark patterns can easily be adjusted by changing the number of bits representing the patterns. Also, various noise sources in the MO disk system can be selectively added using random function generator. Simulated signal spectra were compared with experimental results. The parameters used were as follows: laser beam width was 780 nm, NA was 0.55, signal frequency was 9.4 MHz, duty ratio was 38%, and minimum mark dimension was 0.6 μm by 0.75 μm. Simulated C/N ratio was 50 dB, which was very close to the experimental value of 52 dB. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 273-275 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal processing chemical vapor deposition was employed for selective epitaxial growth of silicon. Defect-free epitaxial islands were grown into oxide windows with 〈110〉 sidewall orientation on (100) silicon substrates. The effects of growth temperature on the degree of faceting have been studied. The hydrogen prebake temperatures as low as 1000 °C have proven to be sufficient for high quality Si deposition without sidewall oxide undercutting.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1775-1777 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality thin silicon epitaxial films have been grown on heavily doped p+ substrates using rapid thermal processing chemical vapor deposition with superior thickness and dopant profile control. The epitaxial growth kinetics have been studied by examining the dependence of growth rate on the deposition temperature, the volume percentage of SiH2Cl2, and the total gas flow rate. Submicron epitaxial layers with hyperabrupt dopant transition (〈200 A(ring)/decade) and excellent crystalline perfection with low defect density have been obtained.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1684-1686 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shallow silicided p+/n junctions have been formed by implanting boron ions into titanium disilicide layers and the subsequent drive-in of the implanted boron into the Si substrate by rapid thermal annealing (RTA). Results of boron diffusion in titanium disilicide layer, its segregation at both silicide/Si and oxide/silicide interfaces, and the junction quality are presented. The precipitation of boron at the SiO2/TiSi2 interface is identified for the first time in the form of B2O3. p+/n diodes and short-channel metal-oxide-semiconductor field-effect transistors with good electrical characteristics have been fabricated using doped silicide technology.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1628-1630 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, rapid thermal processing chemical vapor deposition has been used to grow high quality in situ doped silicon epitaxial layers. Device quality epilayers have been obtained for both boron and phosphorus doping with abrupt dopant transition profiles. The mobility values of these doped epilayers are very close to the values for bulk silicon under the same doping concentration.
    Type of Medium: Electronic Resource
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