GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
Document type
Keywords
Publisher
Language
Years
  • 1
    facet.materialart.
    Unknown
    Health-related quality of life of patients with newly diagnosed chronic myeloid leukemia treated with allogeneic hematopoietic SCT versus imatinib (2014)
    Nature Publishing Group (NPG)
    Details
    Publication Date: 2014-04-03
    Description: Health-related quality of life of patients with newly diagnosed chronic myeloid leukemia treated with allogeneic hematopoietic SCT versus imatinib Bone Marrow Transplantation 49, 576 (April 2014). doi:10.1038/bmt.2013.232 Authors: X-D Mo, Q Jiang, L-P Xu, D-H Liu, K-Y Liu, B Jiang, H Jiang, H Chen, Y-H Chen, X-H Zhang, W Han, Y Wang & X-J Huang
    Keywords: imatinibhematopoietic SCThealth-related quality of lifeallogeneicidentical sibling donor
    Print ISSN: 0268-3369
    Electronic ISSN: 1476-5365
    Topics: Medicine
    Published by Nature Publishing Group (NPG)
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
  • 2
    Electronic Resource
    Electronic Resource
    Interfacial reactions on annealing Cu/Al multilayer thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6165-6169 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin film reactions of Cu/Al multilayer films were investigated by differential scanning calorimetry and transmission electron microscopy. Sequential intermetallic compound formation was found in the temperature range from 300 to 620 K. With excess copper present in the as-deposited trilayer and multilayer films, the observed sequence was CuAl2 and Cu9Al4, and the interfacial reactions were controlled by interfacial and grain boundary diffusion. The activation energies for the formation of CuAl2 and Cu9Al4 are 0.78±0.11 and 0.83±0.2 eV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355183
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Measurements of anisotropic characteristic lengths in YBCO films at microwave frequencies : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5865-5867 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We used microwave self-resonant and magnetically modulated microwave absorption techniques to measure the London penetration depth, λ, and coherence length, ξ, in the direction parallel and perpendicular to the a–b plane of YBCO films. We found that both λ and ξ were anisotropic; it appeared that the value of λ(parallel)(0) was about 1800 A(ring) and λ⊥(86.5) about 26 000 A(ring), where λ(parallel) is the penetration depth for the applied microwave electric field parallel and λ⊥ perpendicular to the film plane (c-axis is perpendicular to the film plane). We deduced ξ(parallel) to be equal to 129 A(ring) and ξ⊥ 40 A(ring) at 86.5 K. The anisotropy factor γ we determined to be about 3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353554
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Persistent photoconductivity in II-VI and III-V semiconductor alloys and a novel infrared detector (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6701-6703 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Persistent photoconductivity (PPC) mechanisms, as well as the similarities and the differences of PPC properties in II-VI and III-V semiconductor alloys have been investigated. The potential applications based on PPC phenomenon in these two kinds of materials are discussed. We have observed that PPC induced in a II-VI mixed crystal by visible (above band gap) illumination can be quenched by long wavelength infrared radiation even at room temperature, which further supports our interpretation that PPC in II-VI mixed crystals is caused by random local potential fluctuations induced by compositional fluctuations. A newly developed infrared detector based on the PPC infrared quenching property of II-VI semiconductor alloys is also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348889
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Coercitivity and its temperature dependence in NdFeB thin films with Cr, Mo, Ti, or Ta buffer layers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6131-6133 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NdFeB thin films of the form A(20 nm)/NdFeB(d nm)/A(20 nm) were prepared by magnetron sputtering on a Si(100) substrate. The hard Nd2Fe14B phase is formed by a postanneal in vacuum. The buffer layers A used are Cr, Mo, Ta, Ti, and NdFeB layer thickness used are 540, 180, 90, and 54 nm. We have found several different combinations of anneal temperature, buffer layer, and NdFeB film thickness d that lead to large coercivity, as high as 17.0 kOe, and energy product, as high as 10.3 MG Oe. The temperature dependence of coercivity was analyzed using a modified Brown's equation and we find that the microstructural parameter αK and the effective demagnetization factor Ne change with the buffer material and anneal temperature. Possible magnetic reversal mechanisms are discussed in light of these results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372632
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Magnetic properties of thin film and granular Dy50Fe50 as a function of size (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6137-6139 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin amorphous Dy50Fe50/A layers are prepared by sputtering to understand the influence of the spacer layer A on magnetic properties in the DyFe thickness regime where size effects are also important. The spacer layer A in this work is either Ti or Ca and we compare to our earlier work involving a spacer layer of Mo. The Dy50Fe50 layer is amorphous and Mössbauer spectroscopy indicates that two types of Fe site are present. Finite size effects manifest themselves below a size of 10 nm in a reduction of magnetic ordering temperature TC and coercivity HC. For equal values of d, the reduction of TC and HC is larger for the system with a Ti or Mo spacer layer as compared to the Ca spacer layer. We argue that both size and the structure of the interface are important in lowering HC and TC. The temperature dependence of coercivity is also studied and suggests that magnetic reversal via domain wall movement occurs in our thinnest films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372634
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    The magnetic anisotropy and domain structure of permalloy antidot arrays (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6322-6324 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of antidot arrays in permalloy films were studied using magnetic force microscopy (MFM), the magneto-optical Kerr effect (MOKE), and torque magnetometry. New observations of the magnetic domain structure, magnetization reversal process, and magnetic anisotropy are presented. Magnetic domains were imaged during magnetization reversal to identify the magnetization switching processes with the field applied along the diagonal and the edge of the hole mesh. A four-fold anisotropy related to the confinement of domains by the hole mesh was observed by torque magnetometry at intermediate fields. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372693
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1046-1052 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The normal-incidence reflectance measurement was employed to obtain the free exciton transition energy (EFX) of AlGaN alloys in AlxGa1−xN/GaN/sapphire heterostructure grown by metalorganic chemical vapor deposition. It was found that the thickness variation of the AlGaN layer may cause a noticeable change in the line shape of reflectance spectrum and impede the identification of the desired excitonic position. By using a reflection model of two absorbing layers with a transparent substrate, the experimental reflectance spectra were theoretically simulated and utilized to explain the reflection mechanism in AlxGa1−xN/GaN heterostructures. On the basis of the above analysis, the feasibility of the reflectance measurement for such heterostructures is confirmed. At room temperature, the EFXs obtained from the fitting showed an excellent agreement with the corresponding peak energies in the photoluminescence spectra. Furthermore, at the optical energy position about 100 meV above the EFX, the spectral feature of exciton-LO phonon interaction was observed in the reflectance spectrum record for low Al composition (x≤0.16). Using the Al mole fraction derived from x-ray diffraction measurement, the bowing parameter of the epitaxial AlGaN layer was determined. In the range of 0≤x〈0.3, the resulting bowing parameter shows a downward value of 0.53 eV. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334923
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Free excitonic transitions in GaN, grown by metal-organic chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7001-7004 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic processes of the free excitonic transitions in GaN grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. The recombination lifetimes of the A and B excitons have been measured at different temperatures and excitation intensities, from which radiative recombination lifetimes of about 0.35 and 0.3 ns for the A and B excitons, respectively, have been obtained. An increase in excitation power has resulted in a drastic enhancement in the radiative decay rate as well as in the exciton photoluminescence quantum yield, suggesting the excitonic transitions may provide gain for laser actions in GaN. The high quality as well as high purity of the investigated MOCVD sample has been demonstrated by the observations of (1) the free A- and B-excitonic transitions, (2) excited states of the free excitons, (3) narrow free excitonic emission linewidths (1.7 meV at 10 K), (4) low electron concentration, and (5) high electron mobilities (∼600 cm2/V s). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362448
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of band-edge transitions in GaN epitaxial layers grown by plasma-assisted molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2675-2683 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Continuous-wave and time-resolved photoluminescence spectroscopies have been employed to study the band-edge transitions in GaN epitaxial layers grown by plasma assisted molecular beam epitaxy. In addition to the neutral-donor-bound exciton transition (the I2 line), a transition line at about 83 meV below the band gap has been observed in an epitaxial layer grown under a lower plasma power or growth rate. This emission line has been assigned to the band-to-impurity transition resulting from the recombination between electrons bound to shallow donors and free holes D0, h+). Systematic studies of these optical transitions have been carried out under different temperatures and excitation intensities. The temperature variation of the spectral peak position of the D0, h+) emission line differs from the band gap variation with temperature, but is consistent with an existing theory for D0, h+) transitions. The dynamic processes of the D0, h+) transition have also been investigated and subnanosecond recombination lifetimes have been observed. The emission energy and the temperature dependencies of the recombination lifetime have been measured. These results have provided solid evidence for the assignment of the D0, h+) transition and show that the motions of the free holes which participated in this transition are more or less restricted in the plane of the epitaxial layer at temperatures below 140 K and that the thermal quenching of the emission intensity of this transition is due to the dissociation of neutral donors. Our results show that time-resolved photoluminescence spectroscopy can be of immense value in understanding the optical recombination dynamics in GaN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361138
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...