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  • 1
    Electronic Resource
    Electronic Resource
    Impact of structure on photogating (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2213-2220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In previous reports, we predicted with computer simulation that photocarriers from blue bias light can contribute under certain conditions to the quantum efficiency in the red wavelength part of the spectrum for hydrogenated amorphous silicon (a-Si:H) p-i-n and Schottky barrier structures. We termed this phenomenon photogating and subsequently experimentally verified its existence by demonstrating red wavelength quantum efficiency(approximately-greater-than)1 under blue bias light. In this report, we show how device structure affects this photogating and affects the wavelength ranges where it can appear. We show with computer simulations that certain structures can display a complementary phenomenon of blue quantum efficiencies(approximately-greater-than)1 under red bias light and discuss supporting experimental data. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361185
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  • 2
    Electronic Resource
    Electronic Resource
    Detection and comparison of localized states produced in poly-Si/ultra-thin oxide/silicon, structures by plasma exposure or plasma charging during reactive ion etching (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2091-2096 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An approach using two terminal current measurements obtained in a cyclic current–voltage sweeping procedure, is shown to be very useful in detecting damage in poly-Si/ultra-thin SiO2/substrate Si gate structures subjected to dry etching. The current peaks seen in this approach, are shown to be due to displacement currents and to have different features depending on whether the capacitor structures were subjected to plasma charging currents, or plasma photon/particle exposure during etching. A model is presented relating these features to localized states at or near the SiO2/substrate interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361067
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  • 3
    Electronic Resource
    Electronic Resource
    Nanocrystalline Si thin films with arrayed void-column network deposited by high density plasma (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 555-561 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High porosity nanocrystalline Si thin films have been deposited using a high density plasma approach at temperatures as low as 100 °C. These films exhibit the same unique properties, such as visible luminescence and gas sensitivity, that are seen in electrochemically etched Si (i.e., porous Si). The nanostructure consists of an array of rodlike columns normal to the substrate surface situated in a void matrix. We have demonstrated that this structure is fully controllable and have varied the porosity up to ∼90% (as derived from optical reflectance) by varying the deposition conditions. In particular, the impact of plasma power has been found to reduce porosity by increasing the nuclei density and therefore the areal density of columns. Humidity sensors have been demonstrated based on the enhanced conductivity of our films (up to 6 orders of magnitude) in response to increase in relative humidity. Depending on the porosity, the conductivity-relative humidity behavior of our films shows variations which can be correlated with the nanostructure. Also, these variations indicate that the dominant charge transport is limited by the dissociation of water into its ions at the column surfaces. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373695
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  • 4
    Electronic Resource
    Electronic Resource
    Polycrystalline silicon thin film transistors on Corning 7059 glass substrates using short time, low-temperature processing (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2554-2556 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new fabrication process for polycrystalline silicon thin film transistors on 7059 glass substrates is reported. This unique fabrication process has the advantages of short processing time and low processing temperature (≤600 °C). The processing is based on the key step of using an ultrathin Pd layer, introduced to the surface of the glass prior to the deposition of an a-Si:H film, to reduce the crystallization time and temperature. It is also based on using an electron cyclotron resonance hydrogen plasma to reduced the passivation time. The n-channel TFTs produced by this new fabrication process have mobilities of 20 cm2/V s, and off-currents of 0.5 pA/μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109294
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  • 5
    Electronic Resource
    Electronic Resource
    Electrically reversible depassivation/passivation mechanism in polycrystalline silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1400-1402 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electrically reversible depassivation/passivation phenomenon has been found for hydrogen passivated polysilicon. This reversible effect is seen in both ECR and rf hydrogen passivated n-channel thin films transistors (TFTs) but is not seen in the corresponding hydrogen passivated p-channel TFTs, nor is it seen in either n- or p-channel TFTs before hydrogenation. This phenomenon was observed while room temperature bias stressing n- and p-channel TFTs fabricated on the same solid phase crystallized polysilicon films on quartz substrates. A model involving hydrogen release or capture at defects and positively charged hydrogen motion in device electric field is proposed. This phenomenon has significant implications for polysilicon TFT design and operation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116093
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  • 6
    Electronic Resource
    Electronic Resource
    Defined crystallization of amorphous-silicon films using contact printing (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 595-597 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Patterned Ni layers are printed on amorphous-silicon (a-Si) films and, during this printing, the metal patterns induce lateral crystallization of the precursor a-Si layer. The printing process consists of simultaneously pressing the Ni printing plate to an a-Si layer and annealing at 550 °C. Printing times of 1 and 3 h are explored. The growth rate of the Ni-induced lateral crystallization is about 8 μm/h in this process. After this printing, Raman spectra show that the resulting polycrystalline-silicon (poly-Si) regions have the characteristic transverse-optical 519 cm−1 phonon peak typical of crystalline silicon. The nonprinted, noncrystallized a-Si areas have the Raman signature of a-Si; i.e., they do not have any peak. The resulting laterally crystallized Si area shows a morphological texture (i.e., a strip-like morphology) originating from the printed Ni area and growing in one direction in transmission electron microscope imaging. In terms of the selective area diffraction pattern (i.e., diffraction spot position and crystal structure), the signature of the area directly contacted by the Ni cannot be distinguished from that of the surrounding laterally crystallized silicon film. This printing approach can be used for channel crystallization/device isolation resulting in a saving of device fabrication steps. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125828
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