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  • 1
    Electronic Resource
    Electronic Resource
    Electrical transport properties of epitaxial BaTiO3 thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 969-977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the temperature dependent transport properties of epitaxial BaTiO3 are reported. Electrical resistivity and thermoelectric power were measured over the temperature range of 77–300 K. Room temperature resistivities of the as-deposited, undoped films range from 105 to 108 Ω cm, while values as low as 55 Ω cm are obtained for the La-doped films. The resistivity shows an activated temperature dependence with the measured activation energies ranging between 0.11 and 0.50 eV. The activation energy depends strongly upon the thin film carrier concentration. Thermoelectric power measurements indicate that the films are n-type. The Seebeck coefficient for La-doped BaTiO3 exhibits metallike behavior, with its magnitude directly proportional to temperature. Temperature dependent resistivity and thermopower measurements indicate that the carrier mobility is activated. A transport model is proposed whereby conduction occurs in the La-doped films via hopping between localized states within a pseudogap formed between a lower Hubbard band and the BaTiO3 conduction band edge. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362909
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  • 2
    Electronic Resource
    Electronic Resource
    Electronic beam induced poling of BaTiO3 thin films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 874-876 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of electron beam irradiation on second harmonic generation of BaTiO3 thin films was studied. Enhanced second harmonic intensity was measured from BaTiO3 thin films irradiated by electron beams of 10, 15, and 25 keV using a scanning electron microscope. The enhancement of the second harmonic generations is attributed to the electron beam-induced poling of the film. The effectiveness of the electron beam irradiation on second harmonic generation enhancement is comparable to that of the corona poling of the film at room temperature. This electron beam induced poling technique offers a promising method for nonlinear optical device fabrication.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109886
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  • 3
    Electronic Resource
    Electronic Resource
    Second-harmonic generation of poled BaTiO3 thin films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1314-1316 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Second-harmonic generation of 1.064 μm incident light was measured on BaTiO3 thin films prepared by metalorganic chemical vapor deposition. Upon corona poling of the film, the second-harmonic signal was significantly enhanced. The second-order nonlinear optical susceptibility, d, of the poled film reaches ∼7.5 times that of the quartz. The enhanced second-harmonic generation shows a very slow decay at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108716
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical properties and poling of BaTiO3 thin films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2973-2975 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dielectric and ferroelectric properties were measured for both highly a-axis textured and randomly oriented BaTiO3 thin films deposited on Pt coated MgO substrates via metal-organic chemical-vapor deposition. Dielectric constants on the order of ε∼10 and an absence of ferroelectric hysteresis were generally observed for the as-deposited films. Upon applying an electric field exceeding a threshold value of ∼50–100 kV/cm across the film, both the dielectric constant and the ferroelectric hystersis were enhanced significantly as a result of poling. The dielectric constant increased to ε∼100, and the spontaneous polarization of the a-axis textured film reached Ps≥15 μC/cm2. The measured dielectric and ferroelectric properties of the BaTiO3 thin films depended on the microstructure of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111375
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  • 5
    Electronic Resource
    Electronic Resource
    Nonorthogonal twinning in thin film oxide perovskites (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2480-2482 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed nonorthogonal twinning in thin film oxide perovskites. This twinning geometry is equivalent to a 60° rotation of the twinned crystallites about the [111] direction in an [001] oriented film. This twinning is not detectable by the standard x-ray tests for film quality (a radial θ–2θ scan and a φ scan at a chi of 45°). In this study we observe this twinning in films of PbZrxTi1−xO3, BaTiO3, and SrRuO3 grown by sputtering and MOCVD on MgO and SrTiO3. These twins are observed in films deposited on a substrate with which there is a large lattice mismatch and in films that are deposited in an oxygen deficient environment. We propose that these twins result from plastic deformation associated with misfit accommodation and discuss the twin geometry and the nature of the twin interface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114614
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  • 6
    Electronic Resource
    Electronic Resource
    Epitaxial growth of BaTiO3 thin films by organometallic chemical vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 41-43 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial BaTiO3 thin films were grown in situ on (100) LaAlO3 by low-pressure organometallic chemical vapor deposition using the precursors Ba (hexafluoroacetylacetonate)2 (tetraglyme) and titanium tetraisopropoxide. The phase composition and epitaxial quality were sensitive to the reactant partial pressures and growth temperature. Deposition at 800 °C yielded [100]-oriented BaTiO3 films. In-plane epitaxy was confirmed for the BaTiO3 films by x-ray diffraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107359
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  • 7
    Electronic Resource
    Electronic Resource
    Formation and observation of 50 nm polarized domains in PbZr1−xTixO3 thin film using scanning probe microscope (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2358-2359 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer size polarized domains were written in a PbZr1−xTixO3 (PZT) thin film using an atomic force microscope (AFM) and the relationship between the polarized domain and the grain of the film was investigated. The polarized domain was formed by applying a pulse voltage to the ferroelectric PZT thin film through a conductive AFM tip. The polarized domain structure was observed by imaging the piezoelectric-induced surface vibration by an AFM with an ac voltage applied between the tip and the bottom electrode of a sample. The polarized domains with a diameter of 50 nm were written within a single grain. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115857
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  • 8
    Electronic Resource
    Electronic Resource
    Ten Years of Sugar Refining. (1925)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 17 (1925), S. 1028-1029 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie50190a012
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  • 9
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    Portrait of Al aqueous nanocluster formation [Chemistry] (2013)
    National Academy of Sciences
    Details
    Publication Date: 2013-11-13
    Description: The selective synthesis and in situ characterization of aqueous Al-containing clusters is a long-standing challenge. We report a newly developed integrated platform that combines (i) a selective, atom-economical, step-economical, scalable synthesis of Al-containing nanoclusters in water via precision electrolysis with strict pH control and (ii) an improved femtosecond stimulated Raman...
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
    Published by National Academy of Sciences
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